SIHB35N60EF-GE3
SIHB35N60EF-GE3
Part Number SIHB35N60EF-GE3 Description MOSFET N-CH D2PAK TO-263 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263ABUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 32A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263)
To learn about the specification of SIHB35N60EF-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHB35N60EF-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHB35N60EF-GE3.
We are offering SIHB35N60EF-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIHB35N60EF-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIHB35N60EF Standard Package 1000 Manufacturer Vishay Siliconix Series EF Packaging Bulk Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 32A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 97mOhm @ 17A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 134nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2568pF @ 100V FET Feature - Power Dissipation (Max) 250W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SIHB35N60EF-GE3 - Related ProductsMore >>
BSC066N06NSATMA1 Infineon Technologies, N-Channel 60V 64A (Tc) 2.5W (Ta), 46W (Tc) Surface Mount PG-TDSON-8-6, OptiMOS™
View
AO4476A Alpha & Omega Semiconductor Inc., N-Channel 30V 15A (Ta) 3.1W (Ta) Surface Mount 8-SO,
View
NTTFS4C10NTAG ON Semiconductor, N-Channel 30V 8.2A (Ta), 44A (Tc) 790mW (Ta), 23.6W (Tc) Surface Mount 8-WDFN (3.3x3.3),
View
IPA80R600P7XKSA1 Infineon Technologies, N-Channel 800V 8A (Tc) 28W (Tc) Through Hole PG-TO220 Full Pack, CoolMOS™ P7
View
SI4434DY-T1-GE3 Vishay Siliconix, N-Channel 250V 2.1A (Ta) 1.56W (Ta) Surface Mount 8-SO, TrenchFET®
View
CSD19534KCS Texas Instruments, N-Channel 100V 100A (Ta) 118W (Tc) Through Hole TO-220-3, NexFET™
View
IXFN420N10T IXYS, N-Channel 100V 420A (Tc) 1070W (Tc) Chassis Mount SOT-227B, GigaMOS™ HiPerFET™
View
PSMN4R3-100ES,127 Nexperia USA Inc., N-Channel 100V 120A (Tc) 338W (Tc) Through Hole I2PAK,
View
IPW65R110CFDFKSA1 Infineon Technologies, N-Channel 650V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO247-3, CoolMOS™
View
SIHS90N65E-E3 Vishay Siliconix, N-Channel 650V 87A (Tc) 625W (Tc) Through Hole SUPER-247™ (TO-274AA),
View
IRLML6346TRPBF Infineon Technologies, N-Channel 30V 3.4A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®
View
STB6N65M2 STMicroelectronics, N-Channel 650V 4A (Tc) 60W (Tc) Surface Mount D2PAK, MDmesh™
View
SIHB35N60EF-GE3 - Tags
English
