PSMN4R3-100ES,127

Part NumberPSMN4R3-100ES,127

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	PSMN4R3-100ES
Standard Package	50
Manufacturer	Nexperia USA Inc.
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	170nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	9900pF @ 50V
FET Feature	-
Power Dissipation (Max)	338W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I2PAK
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA

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