Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHB12N50E-GE3

SIHB12N50E-GE3

SIHB12N50E-GE3

Part NumberSIHB12N50E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 500V 10.5A TO-263

DatasheetSIHB12N50E

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 500V 10.5A (Tc) 114W (Tc) Surface Mount D²PAK (TO-263)

To learn about the specification of SIHB12N50E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHB12N50E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHB12N50E-GE3.
We are offering SIHB12N50E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHB12N50E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHB12N50E
Standard Package	1000
Manufacturer	Vishay Siliconix
Series	-
Packaging	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	886pF @ 100V
FET Feature	-
Power Dissipation (Max)	114W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SIHB12N50E-GE3 - Related Products

	IXFP72N30X3	IXYS, N-Channel 300V 72A (Tc) 390W (Tc) Through Hole TO-220AB, HiPerFET™	View
	FDD850N10L	ON Semiconductor, N-Channel 100V 15.7A (Tc) 50W (Tc) Surface Mount DPAK, PowerTrench®	View
	MMIX1F520N075T2	IXYS, N-Channel 75V 500A (Tc) 830W (Tc) Surface Mount 24-SMPD, GigaMOS™, TrenchT2™	View
	SSM3K336R,LF	Toshiba Semiconductor and Storage, N-Channel 30V 3A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVII-H	View
	STL120N8F7	STMicroelectronics, N-Channel 80V 120A (Tc) 4.8W (Ta), 140W (Tc) Surface Mount PowerFlat™ (5x6), STripFET™ F7	View
	PMCM440VNEZ	Nexperia USA Inc., N-Channel 12V 3.9A (Ta) 400mW (Ta), 12.5W (Tc) Surface Mount 4-WLCSP (0.78x0.78),	View
	DMT10H010LK3-13	Diodes Incorporated, N-Channel 100V 68.8A (Tc) 3W (Ta) Surface Mount TO-252, (D-Pak),	View
	PSMN2R8-80BS,118	Nexperia USA Inc., N-Channel 80V 120A (Tc) 306W (Tc) Surface Mount D2PAK,	View
	NTD18N06LT4G	ON Semiconductor, N-Channel 60V 18A (Ta) 2.1W (Ta), 55W (Tj) Surface Mount DPAK,	View
	SI4464DY-T1-E3	Vishay Siliconix, N-Channel 200V 1.7A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®	View
	FQD13N06LTM	ON Semiconductor, N-Channel 60V 11A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount D-Pak, QFET®	View
	BUK9606-75B,118	Nexperia USA Inc., N-Channel 75V 75A (Tc) 300W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View

SIHB12N50E-GE3 - Tags

SIHB12N50E-GE3 SIHB12N50E-GE3 PDF SIHB12N50E-GE3 datasheet SIHB12N50E-GE3 specification SIHB12N50E-GE3 image SIHB12N50E-GE3 India Renesas Electronics India SIHB12N50E-GE3 buy SIHB12N50E-GE3 SIHB12N50E-GE3 price SIHB12N50E-GE3 distributor SIHB12N50E-GE3 supplier SIHB12N50E-GE3 wholesales