Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHB12N50E-GE3

SIHB12N50E-GE3

SIHB12N50E-GE3

Part NumberSIHB12N50E-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 500V 10.5A TO-263

DatasheetSIHB12N50E

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 500V 10.5A (Tc) 114W (Tc) Surface Mount D²PAK (TO-263)

To learn about the specification of SIHB12N50E-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHB12N50E-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHB12N50E-GE3.
We are offering SIHB12N50E-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHB12N50E-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHB12N50E
Standard Package	1000
Manufacturer	Vishay Siliconix
Series	-
Packaging	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	50nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	886pF @ 100V
FET Feature	-
Power Dissipation (Max)	114W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D²PAK (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SIHB12N50E-GE3 - Related Products

	DMNH6021SK3Q-13	Diodes Incorporated, N-Channel 60V 50A (Tc) 2.1W (Ta) Surface Mount TO-252-4L, Automotive, AEC-Q101	View
	BUK9606-55A,118	Nexperia USA Inc., N-Channel 55V 75A (Tj) 300W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	SUM70060E-GE3	Vishay Siliconix, N-Channel 100V 131A (Tc) 375W (Tc) Surface Mount TO-263 (D2Pak), ThunderFET®	View
	STQ1NK60ZR-AP	STMicroelectronics, N-Channel 600V 300mA (Tc) 3W (Tc) Through Hole TO-92-3, SuperMESH™	View
	HUF75645P3	ON Semiconductor, N-Channel 100V 75A (Tc) 310W (Tc) Through Hole TO-220-3, UltraFET™	View
	PSMN4R0-30YL,115	Nexperia USA Inc., N-Channel 30V 100A (Tc) 69W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	SIE812DF-T1-GE3	Vishay Siliconix, N-Channel 40V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L), TrenchFET®	View
	PSMN2R9-30MLC,115	Nexperia USA Inc., N-Channel 30V 70A (Tc) 91W (Tc) Surface Mount LFPAK33,	View
	IRFR420PBF	Vishay Siliconix, N-Channel 500V 2.4A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View
	DMN3016LK3-13	Diodes Incorporated, N-Channel 30V 12.4A (Ta) 1.6W (Ta) Surface Mount TO-252,	View
	CEDM7004VL TR	Central Semiconductor Corp, N-Channel 30V 450mA (Ta) 100mW (Ta) Surface Mount SOT-883VL,	View
	APT60M60JFLL	Microsemi Corporation, N-Channel 600V 70A (Tc) 694W (Tc) Chassis Mount ISOTOP®, POWER MOS 7®	View

SIHB12N50E-GE3 - Tags

SIHB12N50E-GE3 SIHB12N50E-GE3 PDF SIHB12N50E-GE3 datasheet SIHB12N50E-GE3 specification SIHB12N50E-GE3 image SIHB12N50E-GE3 India Renesas Electronics India SIHB12N50E-GE3 buy SIHB12N50E-GE3 SIHB12N50E-GE3 price SIHB12N50E-GE3 distributor SIHB12N50E-GE3 supplier SIHB12N50E-GE3 wholesales