Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIE812DF-T1-GE3

SIE812DF-T1-GE3

SIE812DF-T1-GE3

Part NumberSIE812DF-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 60A POLARPAK

DatasheetSIE812DF

Package / Case10-PolarPAK® (L)

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)

To learn about the specification of SIE812DF-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIE812DF-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIE812DF-T1-GE3.
We are offering SIE812DF-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIE812DF-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIE812DF
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	170nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	8300pF @ 20V
FET Feature	-
Power Dissipation (Max)	5.2W (Ta), 125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	10-PolarPAK® (L)
Package / Case	10-PolarPAK® (L)

SIE812DF-T1-GE3 - Related Products

	STD7N90K5	STMicroelectronics, N-Channel 900V 7A (Tc) 110W (Tc) Surface Mount DPAK, MDmesh™ K5	View
	NTA7002NT1G	ON Semiconductor, N-Channel 30V 154mA (Tj) 300mW (Tj) Surface Mount SC-75, SOT-416,	View
	IPP65R095C7XKSA1	Infineon Technologies, N-Channel 650V 24A (Tc) 128W (Tc) Through Hole PG-TO220-3, CoolMOS™ C7	View
	AON7404	Alpha & Omega Semiconductor Inc., N-Channel 20V 20A (Ta), 40A (Tc) 3.1W (Ta), 40W (Tc) Surface Mount 8-DFN (3x3),	View
	STB33N65M2	STMicroelectronics, N-Channel 650V 24A (Tc) 190W (Tc) Surface Mount D2PAK, MDmesh™ M2	View
	IRF3805STRLPBF	Infineon Technologies, N-Channel 55V 75A (Tc) 300W (Tc) Surface Mount D2PAK, HEXFET®	View
	DMN2450UFD-7	Diodes Incorporated, N-Channel 20V 900mA (Ta) 400mW (Ta) Surface Mount X1-DFN1212-3,	View
	PMPB12UNEX	Nexperia USA Inc., N-Channel 20V 11.4A (Ta) 470mW (Ta) Surface Mount DFN2020MD-6,	View
	PSMN9R1-30YL,115	Nexperia USA Inc., N-Channel 30V 57A (Tc) 52W (Tc) Surface Mount LFPAK56, Power-SO8, TrenchMOS™	View
	IRFSL4010PBF	Infineon Technologies, N-Channel 100V 180A (Tc) 375W (Tc) Through Hole TO-262, HEXFET®	View
	IRFB3207PBF	Infineon Technologies, N-Channel 75V 170A (Tc) 330W (Tc) Through Hole TO-220AB, HEXFET®	View
	STT6N3LLH6	STMicroelectronics, N-Channel 30V 6A (Tc) 1.6W (Tc) Surface Mount SOT-23-6, DeepGATE™, STripFET™ VI	View

SIE812DF-T1-GE3 - Tags

SIE812DF-T1-GE3 SIE812DF-T1-GE3 PDF SIE812DF-T1-GE3 datasheet SIE812DF-T1-GE3 specification SIE812DF-T1-GE3 image SIE812DF-T1-GE3 India Renesas Electronics India SIE812DF-T1-GE3 buy SIE812DF-T1-GE3 SIE812DF-T1-GE3 price SIE812DF-T1-GE3 distributor SIE812DF-T1-GE3 supplier SIE812DF-T1-GE3 wholesales