TK65G10N1,RQ
TK65G10N1,RQ
Part Number TK65G10N1,RQ Description MOSFET N-CH 100V 65A D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263ABUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 65A (Ta) 156W (Tc) Surface Mount D2PAK
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TK65G10N1,RQ - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TK65G10N1 Standard Package 1 Manufacturer Toshiba Semiconductor and Storage Series U-MOSVIII-H Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 65A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.5mOhm @ 32.5A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 81nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5400pF @ 50V FET Feature - Power Dissipation (Max) 156W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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