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IRL60B216

IRL60B216

Part NumberIRL60B216

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 60V 195A

DatasheetIRL60B216

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 195A (Tc) 375W (Tc) Through Hole TO-220AB

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IRL60B216 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IRL60B216
Standard Package	1000
Manufacturer	Infineon Technologies
Series	HEXFET®, StrongIRFET™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	258nC @ 4.5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	15570pF @ 25V
FET Feature	-
Power Dissipation (Max)	375W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3

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IRL60B216 - Tags

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