BSP88H6327XTSA1
BSP88H6327XTSA1
Part Number BSP88H6327XTSA1 Description MOSFET N-CH 4SOT223 Package / Case TO-261-4, TO-261AAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 240V 350mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
To learn about the specification of BSP88H6327XTSA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add BSP88H6327XTSA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of BSP88H6327XTSA1.
We are offering BSP88H6327XTSA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
BSP88H6327XTSA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSP88 Standard Package 1 Manufacturer Infineon Technologies Series SIPMOS® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 240V Current - Continuous Drain (Id) @ 25°C 350mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V Rds On (Max) @ Id, Vgs 6Ohm @ 350mA, 10V Vgs(th) (Max) @ Id 1.4V @ 108µA Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 95pF @ 25V FET Feature - Power Dissipation (Max) 1.8W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-SOT223-4 Package / Case TO-261-4, TO-261AA
BSP88H6327XTSA1 - Related ProductsMore >>
ES6U3T2CR Rohm Semiconductor, N-Channel 30V 1.4A (Ta) 700mW (Ta) Surface Mount 6-WEMT,
View
BSC900N20NS3GATMA1 Infineon Technologies, N-Channel 200V 15.2A (Tc) 62.5W (Tc) Surface Mount PG-TDSON-8, OptiMOS™
View
IXFN360N15T2 IXYS, N-Channel 150V 310A (Tc) 1070W (Tc) Chassis Mount SOT-227B, GigaMOS™
View
LND150N3-G-P003 Microchip Technology, N-Channel 500V 30mA (Tj) 740mW (Ta) Through Hole TO-92-3,
View
TK380P60Y,RQ Toshiba Semiconductor and Storage, N-Channel 600V 9.7A (Tc) 30W (Tc) Surface Mount DPAK, DTMOSV
View
DMN65D8LQ-7 Diodes Incorporated, N-Channel 60V 310mA (Ta) 370mW (Ta) Surface Mount SOT-23,
View
FCH47N60NF ON Semiconductor, N-Channel 600V 45.8A (Tc) 368W (Tc) Through Hole TO-247-3, SupreMOS™
View
DMN6070SFCL-7 Diodes Incorporated, N-Channel 60V 3A (Ta) 600mW (Ta) Surface Mount X1-DFN1616-6 (Type E),
View
MTP3055VL ON Semiconductor, N-Channel 60V 12A (Tc) 48W (Tc) Through Hole TO-220-3,
View
SI5476DU-T1-GE3 Vishay Siliconix, N-Channel 60V 12A (Tc) 3.1W (Ta), 31W (Tc) Surface Mount 8-PowerPak® ChipFet (3x1.9), TrenchFET®
View
FDS8878 ON Semiconductor, N-Channel 30V 10.2A (Ta) 2.5W (Ta) Surface Mount 8-SOIC, PowerTrench®
View
FDB44N25TM ON Semiconductor, N-Channel 250V 44A (Tc) 307W (Tc) Surface Mount D²PAK, UniFET™
View
BSP88H6327XTSA1 - Tags
English
