SIAA40DJ-T1-GE3
SIAA40DJ-T1-GE3
Part Number SIAA40DJ-T1-GE3 Description MOSFET N-CH 40V 30A SC70-6 Package / Case PowerPAK® SC-70-6Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 40V 30A (Tc) 19.2W (Tc) Surface Mount PowerPAK® SC-70-6 Single
To learn about the specification of SIAA40DJ-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIAA40DJ-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIAA40DJ-T1-GE3.
We are offering SIAA40DJ-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIAA40DJ-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIAA40DJ Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Gen IV Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 12.5mOhm @ 5A, 10V Vgs(th) (Max) @ Id 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V Vgs (Max) +20V, -16V Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 20V FET Feature - Power Dissipation (Max) 19.2W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SC-70-6 Single Package / Case PowerPAK® SC-70-6
SIAA40DJ-T1-GE3 - Related ProductsMore >>
TK14E65W5,S1X Toshiba Semiconductor and Storage, N-Channel 650V 13.7A (Ta) 130W (Tc) Through Hole TO-220, DTMOSIV
View
IXTT1N250HV IXYS, N-Channel 2500V 1.5A (Tc) 250W (Tc) Surface Mount TO-268,
View
BSS123K-TP Micro Commercial Co, N-Channel 100V 170mA 350mW Surface Mount SOT-23,
View
DMTH6004LPS-13 Diodes Incorporated, N-Channel 60V 22A (Ta), 100A (Tc) 2.6W (Ta), 138W (Tc) Surface Mount PowerDI5060-8,
View
IXFN55N50 IXYS, N-Channel 500V 55A (Tc) 625W (Tc) Chassis Mount SOT-227B, HiPerFET™
View
SI8416DB-T2-E1 Vishay Siliconix, N-Channel 8V 16A (Tc) 2.77W (Ta), 13W (Tc) Surface Mount 6-Micro Foot™ (1.5x1), TrenchFET®
View
DMN1150UFB-7B Diodes Incorporated, N-Channel 12V 1.41A (Ta) 500mW (Ta) Surface Mount 3-DFN1006 (1.0x0.6),
View
STP76NF75 STMicroelectronics, N-Channel 75V 80A (Tc) 300W (Tc) Through Hole TO-220, STripFET™ II
View
BSP297H6327XTSA1 Infineon Technologies, N-Channel 200V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®
View
IXFA8N85XHV IXYS, N-Channel 850V 8A (Tc) 200W (Tc) Surface Mount TO-263HV, HiPerFET™
View
FDP39N20 ON Semiconductor, N-Channel 200V 39A (Tc) 251W (Tc) Through Hole TO-220-3, UniFET™
View
STP120NF10 STMicroelectronics, N-Channel 100V 110A (Tc) 312W (Tc) Through Hole TO-220AB, STripFET™ II
View
SIAA40DJ-T1-GE3 - Tags
English
