Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR862DP-T1-GE3

SIR862DP-T1-GE3

SIR862DP-T1-GE3

Part NumberSIR862DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 25V 50A PPAK SO-8

DatasheetSIR862DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 25V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR862DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR862DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR862DP-T1-GE3.
We are offering SIR862DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR862DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR862DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	90nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3800pF @ 10V
FET Feature	-
Power Dissipation (Max)	5.2W (Ta), 69W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR862DP-T1-GE3 - Related Products

	SISH106DN-T1-GE3	Vishay Siliconix, N-Channel 20V 12.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8SH, TrenchFET®	View
	STL13N65M2	STMicroelectronics, N-Channel 650V 6.5A (Tc) 52W (Tc) Surface Mount PowerFlat™ (5x6) HV, MDmesh™ M2	View
	BUK761R7-40E,118	Nexperia USA Inc., N-Channel 40V 120A (Tc) 324W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	STB40NF20	STMicroelectronics, N-Channel 200V 40A (Tc) 160W (Tc) Surface Mount D2PAK, STripFET™	View
	RUF020N02TL	Rohm Semiconductor, N-Channel 20V 2A (Ta) 320mW (Ta) Surface Mount TUMT3,	View
	CSD18540Q5BT	Texas Instruments, N-Channel 60V 100A (Ta) 3.1W (Ta), 195W (Tc) Surface Mount 8-VSON-CLIP (5x6), NexFET™	View
	CSD18514Q5AT	Texas Instruments, N-Channel 40V 89A (Tc) 74W (Tc) Surface Mount 8-VSONP (5x6), NexFET™	View
	IXFH50N85X	IXYS, N-Channel 850V 50A (Tc) 890W (Tc) Through Hole TO-247, HiPerFET™	View
	SIR606BDP-T1-RE3	Vishay Siliconix, N-Channel 100V 10.9A (Ta), 38.7A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	STH270N8F7-6	STMicroelectronics, N-Channel 80V 180A (Tc) 315W (Tc) Surface Mount H²PAK, DeepGATE™, STripFET™ VII	View
	CSD18533Q5AT	Texas Instruments, N-Channel 60V 17A (Ta), 100A (Tc) 3.2W (Ta), 116W (Tc) Surface Mount 8-VSONP (5x6), NexFET™	View
	STE40NC60	STMicroelectronics, N-Channel 600V 40A (Tc) 460W (Tc) Chassis Mount ISOTOP®, PowerMESH™ II	View

SIR862DP-T1-GE3 - Tags

SIR862DP-T1-GE3 SIR862DP-T1-GE3 PDF SIR862DP-T1-GE3 datasheet SIR862DP-T1-GE3 specification SIR862DP-T1-GE3 image SIR862DP-T1-GE3 India Renesas Electronics India SIR862DP-T1-GE3 buy SIR862DP-T1-GE3 SIR862DP-T1-GE3 price SIR862DP-T1-GE3 distributor SIR862DP-T1-GE3 supplier SIR862DP-T1-GE3 wholesales