Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIA108DJ-T1-GE3

SIA108DJ-T1-GE3

SIA108DJ-T1-GE3

Part NumberSIA108DJ-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 80V PPAK SC-70-6L

DatasheetSIA108DJ

Package / CasePowerPAK® SC-70-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 80V 6.6A (Ta), 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

To learn about the specification of SIA108DJ-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA108DJ-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA108DJ-T1-GE3.
We are offering SIA108DJ-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIA108DJ-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIA108DJ
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	6.6A (Ta), 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	38mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	545pF @ 40V
FET Feature	-
Power Dissipation (Max)	3.5W (Ta), 19W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6 Single
Package / Case	PowerPAK® SC-70-6

SIA108DJ-T1-GE3 - Related Products

	IPB065N15N3GATMA1	Infineon Technologies, N-Channel 150V 130A (Tc) 300W (Tc) Surface Mount PG-TO263-7, OptiMOS™	View
	RCX160N20	Rohm Semiconductor, N-Channel 200V 16A (Tc) 2.23W (Ta), 40W (Tc) Through Hole TO-220FM,	View
	DMG4468LK3-13	Diodes Incorporated, N-Channel 30V 9.7A (Ta) 1.68W (Ta) Surface Mount TO-252-3,	View
	TSM80N1R2CP ROG	Taiwan Semiconductor Corporation, N-Channel 800V 5.5A (Tc) 110W (Tc) Surface Mount TO-252, (D-Pak),	View
	DMT3004LPS-13	Diodes Incorporated, N-Channel 30V 21A (Ta), 140A (Tc) 2.7W (Ta), 113W (Tc) Surface Mount PowerDI5060-8,	View
	2SK3018-TP	Micro Commercial Co, N-Channel 30V 100mA (Ta) 200mW (Ta) Surface Mount SOT-323,	View
	RCJ100N25TL	Rohm Semiconductor, N-Channel 250V 10A (Tc) 1.56W (Ta), 40W (Tc) Surface Mount LPTS (SC-83),	View
	NVD6495NLT4G-VF01	ON Semiconductor, N-Channel 100V 25A (Tc) 83W (Tc) Surface Mount DPAK,	View
	FDMS7658AS	ON Semiconductor, N-Channel 30V 29A (Ta), 70A (Tc) 2.5W (Ta), 89W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®, SyncFET™	View
	IRLU014PBF	Vishay Siliconix, N-Channel 60V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Through Hole TO-251AA,	View
	SIHP12N60E-GE3	Vishay Siliconix, N-Channel 600V 12A (Tc) 147W (Tc) Through Hole TO-220AB,	View
	STL120N4LF6AG	STMicroelectronics, N-Channel 40V 120A (Tc) 96W (Tc) Surface Mount PowerFlat™ (5x6), Automotive, AEC-Q101, STripFET™	View

SIA108DJ-T1-GE3 - Tags

SIA108DJ-T1-GE3 SIA108DJ-T1-GE3 PDF SIA108DJ-T1-GE3 datasheet SIA108DJ-T1-GE3 specification SIA108DJ-T1-GE3 image SIA108DJ-T1-GE3 India Renesas Electronics India SIA108DJ-T1-GE3 buy SIA108DJ-T1-GE3 SIA108DJ-T1-GE3 price SIA108DJ-T1-GE3 distributor SIA108DJ-T1-GE3 supplier SIA108DJ-T1-GE3 wholesales