SIA108DJ-T1-GE3
SIA108DJ-T1-GE3
Part Number SIA108DJ-T1-GE3 Description MOSFET N-CH 80V PPAK SC-70-6L Package / Case PowerPAK® SC-70-6Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 80V 6.6A (Ta), 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single
To learn about the specification of SIA108DJ-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA108DJ-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA108DJ-T1-GE3.
We are offering SIA108DJ-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIA108DJ-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIA108DJ Standard Package 3000 Manufacturer Vishay Siliconix Series TrenchFET® Gen IV Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 6.6A (Ta), 12A (Tc) Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V Rds On (Max) @ Id, Vgs 38mOhm @ 4A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 545pF @ 40V FET Feature - Power Dissipation (Max) 3.5W (Ta), 19W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SC-70-6 Single Package / Case PowerPAK® SC-70-6
SIA108DJ-T1-GE3 - Related ProductsMore >>
IRFR430ATRPBF Vishay Siliconix, N-Channel 500V 5A (Tc) 110W (Tc) Surface Mount,
View
IRL630PBF Vishay Siliconix, N-Channel 200V 9A (Tc) 74W (Tc) Through Hole TO-220AB,
View
STD2N95K5 STMicroelectronics, N-Channel 950V 2A (Tc) 45W (Tc) Surface Mount DPAK, SuperMESH5™
View
FDMC8321LDC ON Semiconductor, N-Channel 40V 27A (Ta), 108A (Tc) 2.9W (Ta), 56W (Tc) Surface Mount Dual Cool ™ 33, PowerTrench®
View
SI7450DP-T1-GE3 Vishay Siliconix, N-Channel 200V 3.2A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
View
FDD850N10L ON Semiconductor, N-Channel 100V 15.7A (Tc) 50W (Tc) Surface Mount DPAK, PowerTrench®
View
IXFN140N30P IXYS, N-Channel 300V 110A (Tc) 700W (Tc) Chassis Mount SOT-227B, Polar™
View
SI2328DS-T1-E3 Vishay Siliconix, N-Channel 100V 1.15A (Ta) 730mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
TK14A65W5,S5X Toshiba Semiconductor and Storage, N-Channel 650V 13.7A (Ta) 40W (Tc) Through Hole TO-220SIS, DTMOSIV
View
RD3T100CNTL1 Rohm Semiconductor, N-Channel 200V 10A (Tc) 85W (Tc) Surface Mount TO-252,
View
2N6660 Microchip Technology, N-Channel 60V 410mA (Ta) 6.25W (Tc) Through Hole TO-39,
View
TK5P60W,RVQ Toshiba Semiconductor and Storage, N-Channel 600V 5.4A (Ta) 60W (Tc) Surface Mount DPAK, DTMOSIV
View
SIA108DJ-T1-GE3 - Tags
English
