SIHG70N60AEF-GE3
SIHG70N60AEF-GE3
Part Number SIHG70N60AEF-GE3
Description MOSFET N-CH 600V 60A TO247AC
Package / Case TO-247-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 600V 60A (Tc) 417W (Tc) Through Hole TO-247AC
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SIHG70N60AEF-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIHG70N60AE
Standard Package 500
Manufacturer Vishay Siliconix
Series EF
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 41mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 410nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5348pF @ 100V
FET Feature -
Power Dissipation (Max) 417W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
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