SI8489EDB-T2-E1
SI8489EDB-T2-E1
Part Number SI8489EDB-T2-E1 Description MOSFET P-CH 20V MICROFOOT Package / Case 4-UFBGAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 780mW (Ta), 1.8W (Tc) Surface Mount 4-Microfoot
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SI8489EDB-T2-E1 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI8489EDB Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 44mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 765pF @ 10V FET Feature - Power Dissipation (Max) 780mW (Ta), 1.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 4-Microfoot Package / Case 4-UFBGA
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SI8489EDB-T2-E1 - Tags
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