Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2309CDS-T1-GE3

SI2309CDS-T1-GE3

SI2309CDS-T1-GE3

Part NumberSI2309CDS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 60V 1.6A SOT23-3

DatasheetSI2309CDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 60V 1.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2309CDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2309CDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2309CDS-T1-GE3.
We are offering SI2309CDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2309CDS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2309CDS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	345mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4.1nC @ 4.5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	210pF @ 30V
FET Feature	-
Power Dissipation (Max)	1W (Ta), 1.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2309CDS-T1-GE3 - Related Products

	DMP3056LSS-13	Diodes Incorporated, P-Channel 30V 7.1A (Ta) 2.5W (Ta) Surface Mount 8-SOP,	View
	SI2307CDS-T1-E3	Vishay Siliconix, P-Channel 30V 3.5A (Tc) 1.1W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	SI8817DB-T2-E1	Vishay Siliconix, P-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot, TrenchFET®	View
	SI2333-TP	Micro Commercial Co, P-Channel 12V 6A (Tc) 350mW (Tc) Surface Mount SOT-23,	View
	SI2371EDS-T1-GE3	Vishay Siliconix, P-Channel 30V 4.8A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23, TrenchFET®	View
	BSH201,215	Nexperia USA Inc., P-Channel 60V 300mA (Ta) 417mW (Ta) Surface Mount TO-236AB,	View
	SI7119DN-T1-GE3	Vishay Siliconix, P-Channel 200V 3.8A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	MCS2305B-TP	Micro Commercial Co, P-Channel 20V 8.2A 1.05W Surface Mount 8-TSSOP,	View
	DMP2078LCA3-7	Diodes Incorporated, P-Channel 20V 3.4A (Ta) 810mW (Ta) Surface Mount X4-DSN1006-3,	View
	SQD19P06-60L_T4GE3	Vishay Siliconix, P-Channel 60V 20A (Tc) 46W (Tc) Surface Mount TO-252AA, Automotive, AEC-Q101, TrenchFET®	View
	SI7117DN-T1-GE3	Vishay Siliconix, P-Channel 150V 2.17A (Tc) 3.2W (Ta), 12.5W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	BSS84PWH6327XTSA1	Infineon Technologies, P-Channel 60V 150mA (Ta) 300mW (Ta) Surface Mount PG-SOT323-3, SIPMOS®	View

SI2309CDS-T1-GE3 - Tags

SI2309CDS-T1-GE3 SI2309CDS-T1-GE3 PDF SI2309CDS-T1-GE3 datasheet SI2309CDS-T1-GE3 specification SI2309CDS-T1-GE3 image SI2309CDS-T1-GE3 India Renesas Electronics India SI2309CDS-T1-GE3 buy SI2309CDS-T1-GE3 SI2309CDS-T1-GE3 price SI2309CDS-T1-GE3 distributor SI2309CDS-T1-GE3 supplier SI2309CDS-T1-GE3 wholesales