SI7370DP-T1-E3
SI7370DP-T1-E3
Part Number SI7370DP-T1-E3 Description MOSFET N-CH 60V 9.6A PPAK SO-8 Package / Case PowerPAK® SO-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 60V 9.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
To learn about the specification of SI7370DP-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI7370DP-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI7370DP-T1-E3.
We are offering SI7370DP-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI7370DP-T1-E3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI7370DP Standard Package 3000 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 9.6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 11mOhm @ 12A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V Vgs (Max) ±20V FET Feature - Power Dissipation (Max) 1.9W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8
SI7370DP-T1-E3 - Related ProductsMore >>
SI7884BDP-T1-E3 Vishay Siliconix, N-Channel 40V 58A (Tc) 4.6W (Ta), 46W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
View
IPN60R1K0CEATMA1 Infineon Technologies, N-Channel 600V 6.8A (Tc) 5W (Tc) Surface Mount PG-SOT223, CoolMOS™ CE
View
CSD18536KCS Texas Instruments, N-Channel 60V 200A (Ta) 375W (Tc) Through Hole TO-220-3, NexFET™
View
AUIRF3710ZS Infineon Technologies, N-Channel 100V 59A (Tc) 160W (Tc) Surface Mount D2PAK, HEXFET®
View
TSM190N08CZ C0G Taiwan Semiconductor Corporation, N-Channel 75V 190A (Tc) 250W (Tc) Through Hole TO-220,
View
STH150N10F7-2 STMicroelectronics, N-Channel 100V 110A (Tc) 250W (Tc) Surface Mount H2Pak-2, DeepGATE™, STripFET™ VII
View
FCD360N65S3R0 ON Semiconductor, N-Channel 650V 10A (Tc) 83W (Tc) Surface Mount D-PAK (TO-252), SuperFET® III
View
TK650A60F,S4X Toshiba Semiconductor and Storage, N-Channel 600V 11A (Ta) 45W (Tc) Through Hole TO-220SIS, U-MOSIX
View
IRFS7734TRL7PP Infineon Technologies, N-Channel 75V 197A (Tc) 294W (Tc) Surface Mount D2PAK (7-Lead), HEXFET®, StrongIRFET™
View
STD1NK60T4 STMicroelectronics, N-Channel 600V 1A (Tc) 30W (Tc) Surface Mount DPAK, SuperMESH™
View
IRFS4227TRLPBF Infineon Technologies, N-Channel 200V 62A (Tc) 330W (Tc) Surface Mount D2PAK, HEXFET®
View
IPP80N08S2L07AKSA1 Infineon Technologies, N-Channel 75V 80A (Tc) 300W (Tc) Through Hole PG-TO220-3-1, OptiMOS™
View
SI7370DP-T1-E3 - Tags
English
