SIHP10N40D-GE3
SIHP10N40D-GE3
Part Number SIHP10N40D-GE3 Description MOSFET N-CH 400V 10A TO-220AB Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 400V 10A (Tc) 147W (Tc) Through Hole TO-220AB
To learn about the specification of SIHP10N40D-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHP10N40D-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHP10N40D-GE3.
We are offering SIHP10N40D-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SIHP10N40D-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SiHP10N40D Standard Package 1000 Manufacturer Vishay Siliconix Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 400V Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 600mOhm @ 5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 526pF @ 100V FET Feature - Power Dissipation (Max) 147W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3
SIHP10N40D-GE3 - Related ProductsMore >>
AOD3N80 Alpha & Omega Semiconductor Inc., N-Channel 800V 2.8A (Tc) 83W (Tc) Surface Mount TO-252, (D-Pak),
View
RV2C002UNT2L Rohm Semiconductor, N-Channel 20V 180mA (Ta) 100mW (Ta) Surface Mount DFN1006-3 (VML1006),
View
IRF7451TRPBF Infineon Technologies, N-Channel 150V 3.6A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
View
FDP75N08A ON Semiconductor, N-Channel 75V 75A (Tc) 137W (Tc) Through Hole TO-220-3, UniFET™
View
STP180N10F3 STMicroelectronics, N-Channel 100V 120A (Tc) 315W (Tc) Through Hole TO-220, STripFET™ III
View
FDD5N60NZTM ON Semiconductor, N-Channel 600V 4A (Tc) 83W (Tc) Surface Mount D-Pak, UniFET-II™
View
IPB016N06L3GATMA1 Infineon Technologies, N-Channel 60V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7, OptiMOS™
View
STP15N80K5 STMicroelectronics, N-Channel 800V 14A (Tc) 190W (Tc) Through Hole TO-220, SuperMESH5™
View
IPS70R600P7SAKMA1 Infineon Technologies, N-Channel 700V 8.5A (Tc) 43W (Tc) Through Hole PG-TO251-3, CoolMOS™ P7
View
DMN15H310SE-13 Diodes Incorporated, N-Channel 150V 2A (Ta), 7.1A (Tc) 1.9W (Ta) Surface Mount SOT-223,
View
TSM8N80CZ C0G Taiwan Semiconductor Corporation, N-Channel 800V 8A (Tc) 40.3W (Tc) Through Hole TO-220,
View
IPA60R280P7XKSA1 Infineon Technologies, N-Channel 600V 12A (Tc) 24W (Tc) Through Hole PG-TO220 Full Pack, CoolMOS™ P7
View
SIHP10N40D-GE3 - Tags
English
