SI7336ADP-T1-E3
SI7336ADP-T1-E3
Part Number SI7336ADP-T1-E3 Description MOSFET N-CH 30V 30A PPAK SO-8 Package / Case PowerPAK® SO-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 30A (Ta) 5.4W (Ta) Surface Mount PowerPAK® SO-8
To learn about the specification of SI7336ADP-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI7336ADP-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI7336ADP-T1-E3.
We are offering SI7336ADP-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI7336ADP-T1-E3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI7336ADP Standard Package 3000 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 30A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3mOhm @ 25A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 50nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5600pF @ 15V FET Feature - Power Dissipation (Max) 5.4W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® SO-8 Package / Case PowerPAK® SO-8
SI7336ADP-T1-E3 - Related ProductsMore >>
IPT60R102G7XTMA1 Infineon Technologies, N-Channel 650V 23A (Tc) 141W (Tc) Surface Mount PG-HSOF-8-2, CoolMOS™ G7
View
TK10P60W,RVQ Toshiba Semiconductor and Storage, N-Channel 600V 9.7A (Ta) 80W (Tc) Surface Mount DPAK, DTMOSIV
View
IPN70R900P7SATMA1 Infineon Technologies, N-Channel 700V 6A (Tc) 6.5W (Tc) Surface Mount PG-SOT223, CoolMOS™ P7
View
IRFP4321PBF Infineon Technologies, N-Channel 150V 78A (Tc) 310W (Tc) Through Hole TO-247AC, HEXFET®
View
FDD8770 ON Semiconductor, N-Channel 25V 35A (Tc) 115W (Tc) Surface Mount TO-252AA, PowerTrench®
View
IXFT36N50P IXYS, N-Channel 500V 36A (Tc) 540W (Tc) Surface Mount TO-268, HiPerFET™, PolarP2™
View
SI7386DP-T1-E3 Vishay Siliconix, N-Channel 30V 12A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
View
TK28N65W,S1F Toshiba Semiconductor and Storage, N-Channel 650V 27.6A (Ta) 230W (Tc) Through Hole TO-247, DTMOSIV
View
IRF8010PBF Infineon Technologies, N-Channel 100V 80A (Tc) 260W (Tc) Through Hole TO-220AB, HEXFET®
View
DN3135K1-G Microchip Technology, N-Channel 350V 72mA (Tj) 360mW (Ta) Surface Mount SOT-23-3 (TO-236),
View
STB46NF30 STMicroelectronics, N-Channel 300V 42A (Tc) 300W (Tc) Surface Mount D2PAK, STripFET™ II
View
STW13N80K5 STMicroelectronics, N-Channel 800V 12A (Tc) 190W (Tc) Through Hole TO-247, SuperMESH5™
View
SI7336ADP-T1-E3 - Tags
English
