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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDB9409L-F085
Standard Package 800
Manufacturer ON Semiconductor
Series Automotive, AEC-Q101, PowerTrench®
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3360pF @ 20V
FET Feature -
Power Dissipation (Max) 94W (Tj)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RJK0855DPB-00#J5
Renesas Electronics America, N-Channel 80V 30A (Ta) 60W (Tc) Surface Mount LFPAK,
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STD25NF20
STMicroelectronics, N-Channel 200V 18A (Tc) 110W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, STripFET™
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IRFS4321TRLPBF
Infineon Technologies, N-Channel 150V 85A (Tc) 350W (Tc) Surface Mount D2PAK, HEXFET®
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SIHG17N80E-GE3
Vishay Siliconix, N-Channel 800V 15A (Tc) 208W (Tc) Through Hole TO-247AC,
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ZXMN3A03E6TA
Diodes Incorporated, N-Channel 30V 3.7A (Ta) 1.1W (Ta) Surface Mount SOT-23-6,
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SQM200N04-1M7L_GE3
Vishay Siliconix, N-Channel 40V 200A (Tc) 375W (Tc) Surface Mount TO-263-7, TrenchFET®
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NTE4153NT1G
ON Semiconductor, N-Channel 20V 915mA (Ta) 300mW (Tj) Surface Mount SC-89-3,
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APT28M120B2
Microsemi Corporation, N-Channel 1200V 29A (Tc) 1135W (Tc) Through Hole T-MAX™ [B2], POWER MOS 8™
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IPP60R190P6XKSA1
Infineon Technologies, N-Channel 600V 20.2A (Tc) 151W (Tc) Through Hole PG-TO220-3, CoolMOS™ P6
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IPB60R125C6ATMA1
Infineon Technologies, N-Channel 600V 30A (Tc) 219W (Tc) Surface Mount D²PAK (TO-263AB), CoolMOS™
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US6U37TR
Rohm Semiconductor, N-Channel 30V 1.5A (Ta) 1W (Ta) Surface Mount TUMT6,
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STD20NF06LAG
STMicroelectronics, N-Channel 60V 24A (Tc) 60W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, STripFET™ II
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