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FQN1N60CTA

FQN1N60CTA

Part NumberFQN1N60CTA

ManufacturerON Semiconductor

DescriptionMOSFET N-CH 600V 300MA TO-92

DatasheetFQN1N60C

Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

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Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 300mA (Tc) 1W (Ta), 3W (Tc) Through Hole TO-92-3

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FQN1N60CTA - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	FQN1N60C
Standard Package	2000
Manufacturer	ON Semiconductor
Series	QFET®
Packaging	Tape & Box (TB)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	11.5Ohm @ 150mA, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.2nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	170pF @ 25V
FET Feature	-
Power Dissipation (Max)	1W (Ta), 3W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-92-3
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

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