SI7178DP-T1-GE3

Part NumberSI7178DP-T1-GE3

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI7178DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	14mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	72nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2870pF @ 50V
FET Feature	-
Power Dissipation (Max)	6.25W (Ta), 104W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

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SIHA180N60E-GE3	Vishay Siliconix, N-Channel 600V 19A (Tc) 33W (Tc) Through Hole TO-220 Full Pack,	View
NTMFS4852NT1G	ON Semiconductor, N-Channel 30V 16A (Ta), 155A (Tc) 900mW (Ta), 86.2W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
BUK7Y08-40B,115	Nexperia USA Inc., N-Channel 40V 75A (Tc) 105W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View
STL7N10F7	STMicroelectronics, N-Channel 100V 2.9W (Ta), 50W (Tc) Surface Mount PowerFlat™ (3.3x3.3), DeepGATE™, STripFET™ VII	View
SI7326DN-T1-E3	Vishay Siliconix, N-Channel 30V 6.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8, TrenchFET®	View