IPN50R650CEATMA1
IPN50R650CEATMA1
Part Number IPN50R650CEATMA1
Description MOSFET N-CHANNEL 500V 9A SOT223
Package / Case SOT-223-3
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Lead Time To be Confirmed
Detailed Description N-Channel 500V 9A (Tc) 5W (Tc) Surface Mount PG-SOT223
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IPN50R650CEATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPN50R650CE
Standard Package 3000
Manufacturer Infineon Technologies
Series CoolMOS™ CE
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 13V
Rds On (Max) @ Id, Vgs 650mOhm @ 1.8A, 13V
Vgs(th) (Max) @ Id 3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 342pF @ 100V
FET Feature -
Power Dissipation (Max) 5W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223
Package / Case SOT-223-3
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