TN5325N3-G
TN5325N3-G
Part Number TN5325N3-G Description MOSFET N-CH 250V 0.215A TO92-3 Package / Case TO-226-3, TO-92-3 (TO-226AA)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 250V 215mA (Ta) 740mW (Ta) Through Hole TO-92-3
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TN5325N3-G - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet TN5325 Datasheet Standard Package 1000 Manufacturer Microchip Technology Series - Packaging Bulk Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 215mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 7Ohm @ 1A, 10V Vgs(th) (Max) @ Id 2V @ 1mA Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 110pF @ 25V FET Feature - Power Dissipation (Max) 740mW (Ta) Operating Temperature - Mounting Type Through Hole Supplier Device Package TO-92-3 Package / Case TO-226-3, TO-92-3 (TO-226AA)
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