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SI7113ADN-T1-GE3

SI7113ADN-T1-GE3

Part NumberSI7113ADN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 100V 10.8A 1212-8

DatasheetSI7113ADN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 100V 10.8A (Tc) 27.8W (Tc) Surface Mount PowerPAK® 1212-8

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SI7113ADN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI7113ADN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	10.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	132mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id	2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	16.5nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	515pF @ 50V
FET Feature	-
Power Dissipation (Max)	27.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

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