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CSD25213W10

CSD25213W10

Part NumberCSD25213W10

ManufacturerTexas Instruments

DescriptionMOSFET P-CH 20V 1.6A 4DSBGA

DatasheetCSD25213W10

Package / Case4-UFBGA, DSBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 1.6A (Ta) 1W (Ta) Surface Mount 4-DSBGA (1x1)

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CSD25213W10 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	CSD25213W10
Standard Package	1
Manufacturer	Texas Instruments
Series	NexFET™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	47mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	2.9nC @ 4.5V
Vgs (Max)	-6V
Input Capacitance (Ciss) (Max) @ Vds	478pF @ 10V
FET Feature	-
Power Dissipation (Max)	1W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-DSBGA (1x1)
Package / Case	4-UFBGA, DSBGA

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