CSD25213W10
CSD25213W10
Part Number CSD25213W10 Description MOSFET P-CH 20V 1.6A 4DSBGA Package / Case 4-UFBGA, DSBGAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 1.6A (Ta) 1W (Ta) Surface Mount 4-DSBGA (1x1)
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CSD25213W10 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet CSD25213W10 Standard Package 1 Manufacturer Texas Instruments Series NexFET™ Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1.6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 47mOhm @ 1A, 4.5V Vgs(th) (Max) @ Id 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 2.9nC @ 4.5V Vgs (Max) -6V Input Capacitance (Ciss) (Max) @ Vds 478pF @ 10V FET Feature - Power Dissipation (Max) 1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 4-DSBGA (1x1) Package / Case 4-UFBGA, DSBGA
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