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SI5403DC-T1-GE3

SI5403DC-T1-GE3

Part NumberSI5403DC-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 30V 6A 1206-8

DatasheetSI5403DC

Package / Case8-SMD, Flat Lead

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 6A (Tc) 2.5W (Ta), 6.3W (Tc) Surface Mount 1206-8 ChipFET™

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SI5403DC-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI5403DC
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	30mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	42nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1340pF @ 15V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 6.3W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	1206-8 ChipFET™
Package / Case	8-SMD, Flat Lead

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