SI3493BDV-T1-GE3
SI3493BDV-T1-GE3
Part Number SI3493BDV-T1-GE3 Description MOSFET P-CH 20V 8A 6-TSOP Package / Case SOT-23-6 Thin, TSOT-23-6Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 8A (Tc) 2.08W (Ta), 2.97W (Tc) Surface Mount 6-TSOP
To learn about the specification of SI3493BDV-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI3493BDV-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI3493BDV-T1-GE3.
We are offering SI3493BDV-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI3493BDV-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI3493BDV Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 27.5mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 43.5nC @ 5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 1805pF @ 10V FET Feature - Power Dissipation (Max) 2.08W (Ta), 2.97W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SOT-23-6 Thin, TSOT-23-6
SI3493BDV-T1-GE3 - Related ProductsMore >>
RD3H160SPTL1 Rohm Semiconductor, P-Channel 45V 16A (Ta) 20W (Tc) Surface Mount TO-252,
View
SQM120P10_10M1LGE3 Vishay Siliconix, P-Channel 100V 120A (Tc) 375W (Tc) Surface Mount TO-263 (D²Pak), Automotive, AEC-Q101, TrenchFET®
View
SI2319DS-T1-GE3 Vishay Siliconix, P-Channel 40V 2.3A (Ta) 750mW (Ta) Surface Mount, TrenchFET®
View
SI4143DY-T1-GE3 Vishay Siliconix, P-Channel 30V 25.3A (Tc) 6W (Tc) Surface Mount 8-SO, TrenchFET®
View
SI8821EDB-T2-E1 Vishay Siliconix, P-Channel 30V 500mW (Ta) Surface Mount 4-Microfoot, TrenchFET®
View
IXTH26P20P IXYS, P-Channel 200V 26A (Tc) 300W (Tc) Through Hole TO-247 (IXTH), PolarP™
View
TP2635N3-G Microchip Technology, P-Channel 350V 180mA (Tj) 1W (Ta) Through Hole TO-92-3,
View
MCH6353-TL-W ON Semiconductor, P-Channel 12V 6A (Ta) 1.4W (Ta) Surface Mount 6-MCPH,
View
MIC94052YC6-TR Microchip Technology, P-Channel 6V 2A (Ta) 270mW (Ta) Surface Mount SC-70-6,
View
BSS215PH6327XTSA1 Infineon Technologies, P-Channel 20V 1.5A (Ta) 500mW (Ta) Surface Mount SOT-23-3, OptiMOS™
View
TP2540N8-G Microchip Technology, P-Channel 400V 125mA (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89),
View
BSS209PWH6327XTSA1 Infineon Technologies, P-Channel 20V 630mA (Tc) 300mW (Ta) Surface Mount PG-SOT323-3, OptiMOS™
View
SI3493BDV-T1-GE3 - Tags
English
