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TP0610K-T1-GE3

TP0610K-T1-GE3

Part NumberTP0610K-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 60V 185MA TO-236

DatasheetTP0610K

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 60V 185mA (Ta) 350mW (Ta) Surface Mount SOT-23-3 (TO-236)

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TP0610K-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	TP0610K
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	185mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	1.7nC @ 15V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	23pF @ 25V
FET Feature	-
Power Dissipation (Max)	350mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

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