SI4835DDY-T1-GE3
SI4835DDY-T1-GE3
Part Number SI4835DDY-T1-GE3 Description MOSFET P-CH 30V 13A 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 30V 13A (Tc) 2.5W (Ta), 5.6W (Tc) Surface Mount 8-SO
To learn about the specification of SI4835DDY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4835DDY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4835DDY-T1-GE3.
We are offering SI4835DDY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI4835DDY-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI4835DDY Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 13A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 18mOhm @ 10A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 1960pF @ 15V FET Feature - Power Dissipation (Max) 2.5W (Ta), 5.6W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width)
SI4835DDY-T1-GE3 - Related ProductsMore >>
SSM3J374R,LF Toshiba Semiconductor and Storage, P-Channel 30V 4A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVI
View
PMFPB8032XP,115 Nexperia USA Inc., P-Channel 20V 2.7A (Ta) 485mW (Ta), 6.25W (Tc) Surface Mount 6-HUSON-EP (2x2),
View
SSM3J144TU,LF Toshiba Semiconductor and Storage, P-Channel 20V 3.2A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSVI
View
IRFR9220TRPBF Vishay Siliconix, P-Channel 200V 3.6A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,
View
SSM6J501NU,LF Toshiba Semiconductor and Storage, P-Channel 20V 10A (Ta) 1W (Ta) Surface Mount 6-UDFNB (2x2), U-MOSVI
View
IRFU9024NPBF Infineon Technologies, P-Channel 55V 11A (Tc) 38W (Tc) Through Hole IPAK (TO-251), HEXFET®
View
NTHS4101PT1G ON Semiconductor, P-Channel 20V 4.8A (Tj) 1.3W (Ta) Surface Mount ChipFET™,
View
IRF9640STRRPBF Vishay Siliconix, P-Channel 200V 11A (Tc) 125W (Tc) Surface Mount,
View
FDME905PT ON Semiconductor, P-Channel 12V 8A (Ta) 2.1W (Ta) Surface Mount MicroFet 1.6x1.6 Thin, PowerTrench®
View
DMP3028LFDE-7 Diodes Incorporated, P-Channel 30V 6.8A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type E),
View
SI5457DC-T1-GE3 Vishay Siliconix, P-Channel 20V 6A (Tc) 5.7W (Tc) Surface Mount 1206-8 ChipFET™, TrenchFET®
View
SI1469DH-T1-GE3 Vishay Siliconix, P-Channel 20V 2.7A (Tc) 1.5W (Ta), 2.78W (Tc) Surface Mount SC-70-6 (SOT-363), TrenchFET®
View
SI4835DDY-T1-GE3 - Tags
English
