Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SISH617DN-T1-GE3

SISH617DN-T1-GE3

SISH617DN-T1-GE3

Part NumberSISH617DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CHAN 30V POWERPAK 1212-

DatasheetSISH617DN

Package / CasePowerPAK® 1212-8SH

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 30V 13.9A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH

To learn about the specification of SISH617DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISH617DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISH617DN-T1-GE3.
We are offering SISH617DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SISH617DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SISH617DN
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	13.9A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	12.3mOhm @ 13.9A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	59nC @ 10V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	1800pF @ 15V
FET Feature	-
Power Dissipation (Max)	3.7W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8SH
Package / Case	PowerPAK® 1212-8SH

SISH617DN-T1-GE3 - Related Products

	RTL030P02TR	Rohm Semiconductor, P-Channel 20V 3A (Ta) 1W (Ta) Surface Mount TUMT6,	View
	SQS401ENW-T1_GE3	Vishay Siliconix, P-Channel 40V 16A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8, Automotive, AEC-Q101, TrenchFET®	View
	NTTFS5116PLTAG	ON Semiconductor, P-Channel 60V 5.7A (Ta) 3.2W (Ta), 40W (Tc) Surface Mount 8-WDFN (3.3x3.3),	View
	IXTH96P085T	IXYS, P-Channel 85V 96A (Tc) 298W (Tc) Through Hole TO-247 (IXTH), TrenchP™	View
	NTNS3A91PZT5G	ON Semiconductor, P-Channel 20V 223mA (Ta) 121mW (Ta) Surface Mount 3-XLLGA (0.62x0.62),	View
	IRFR5305TRPBF	Infineon Technologies, P-Channel 55V 31A (Tc) 110W (Tc) Surface Mount D-Pak, HEXFET®	View
	RQ6E050ATTCR	Rohm Semiconductor, P-Channel 30V 5A (Ta) 1.25W (Ta) Surface Mount TSMT6 (SC-95),	View
	FQP8P10	ON Semiconductor, P-Channel 100V 8A (Tc) 65W (Tc) Through Hole TO-220-3, QFET®	View
	SQJ463EP-T1_GE3	Vishay Siliconix, P-Channel 40V 30A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	RQ5E035ATTCL	Rohm Semiconductor, P-Channel 30V 3.5A (Ta) 1W (Ta) Surface Mount TSMT3,	View
	FDFMA2P853	ON Semiconductor, P-Channel 20V 3A (Ta) 1.4W (Ta) Surface Mount 6-MicroFET (2x2), PowerTrench®	View
	RSJ151P10TL	Rohm Semiconductor, P-Channel 100V 15A (Tc) 1.35W (Ta), 50W (Tc) Surface Mount LPTS (SC-83),	View

SISH617DN-T1-GE3 - Tags

SISH617DN-T1-GE3 SISH617DN-T1-GE3 PDF SISH617DN-T1-GE3 datasheet SISH617DN-T1-GE3 specification SISH617DN-T1-GE3 image SISH617DN-T1-GE3 India Renesas Electronics India SISH617DN-T1-GE3 buy SISH617DN-T1-GE3 SISH617DN-T1-GE3 price SISH617DN-T1-GE3 distributor SISH617DN-T1-GE3 supplier SISH617DN-T1-GE3 wholesales