SISH617DN-T1-GE3


SISH617DN-T1-GE3

Part NumberSISH617DN-T1-GE3

Manufacturer

Description

Datasheet

Package / CasePowerPAK® 1212-8SH

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

SISH617DN-T1-GE3 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerVishay Siliconix
SeriesTrenchFET®
PackagingCut Tape (CT)
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C13.9A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs12.3mOhm @ 13.9A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs59nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1800pF @ 15V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 52W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8SH
Package / CasePowerPAK® 1212-8SH

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SISH617DN-T1-GE3 - Tags

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