SI4459BDY-T1-GE3
SI4459BDY-T1-GE3
Part Number SI4459BDY-T1-GE3 Description MOSFET P-CHAN 30V SO-8 Package / Case 8-SOIC (0.154", 3.90mm Width)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 30V 20.5A (Ta), 27.8A (Tc) 3.1W (Ta), 5.6W (Tc) Surface Mount 8-SO
To learn about the specification of SI4459BDY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4459BDY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4459BDY-T1-GE3.
We are offering SI4459BDY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI4459BDY-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI4459BDY Standard Package 2500 Manufacturer Vishay Siliconix Series TrenchFET® Gen IV Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 20.5A (Ta), 27.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.9mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 84nC @ 10V Vgs (Max) +20V, -16V Input Capacitance (Ciss) (Max) @ Vds 3490pF @ 15V FET Feature - Power Dissipation (Max) 3.1W (Ta), 5.6W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width)
SI4459BDY-T1-GE3 - Related ProductsMore >>
MCH6321-TL-E ON Semiconductor, P-Channel 20V 4A (Ta) Surface Mount 6-MCPH,
View
MIC94052YC6-TR Microchip Technology, P-Channel 6V 2A (Ta) 270mW (Ta) Surface Mount SC-70-6,
View
BSS314PEH6327XTSA1 Infineon Technologies, P-Channel 30V 1.5A (Ta) 500mW (Ta) Surface Mount SOT-23-3, OptiMOS™
View
MCT06P10-TP Micro Commercial Co, P-Channel 100V 6A 1.25W Surface Mount SOT-223,
View
SSM3J353F,LF Toshiba Semiconductor and Storage, P-Channel 30V 2A (Ta) 600mW (Ta) Surface Mount S-Mini, U-MOSVI
View
AUIRF4905STRL Infineon Technologies, P-Channel 55V 42A (Tc) 200W (Tc) Surface Mount D²PAK (TO-263AB), Automotive, AEC-Q101, HEXFET®
View
MCH3383-TL-W ON Semiconductor, P-Channel 12V 3.5A (Ta) 1W (Ta) Surface Mount SC-70FL/MCPH3,
View
DMP25H18DLFDE-7 Diodes Incorporated, P-Channel 250V 260mA (Ta) 600mW (Ta) Surface Mount U-DFN2020-6 (Type E),
View
DMG3401LSN-7 Diodes Incorporated, P-Channel 30V 3A (Ta) 800mW (Ta) Surface Mount SC-59,
View
STT4P3LLH6 STMicroelectronics, P-Channel 30V 4A (Ta) 1.6W (Ta) Surface Mount SOT-23-6, DeepGATE™, STripFET™ H6
View
BBS3002-DL-1E ON Semiconductor, P-Channel 60V 100A (Ta) 90W (Tc) Surface Mount D²PAK (TO-263),
View
NTLUS3A40PZTBG ON Semiconductor, P-Channel 20V 4A (Ta) 700mW (Ta) Surface Mount 6-UDFN (2x2), µCool™
View
SI4459BDY-T1-GE3 - Tags
English
