SI4459BDY-T1-GE3
SI4459BDY-T1-GE3
Part Number SI4459BDY-T1-GE3
Description MOSFET P-CHAN 30V SO-8
Package / Case 8-SOIC (0.154", 3.90mm Width)
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 30V 20.5A (Ta), 27.8A (Tc) 3.1W (Ta), 5.6W (Tc) Surface Mount 8-SO
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SI4459BDY-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI4459BDY
Standard Package 2500
Manufacturer Vishay Siliconix
Series TrenchFET® Gen IV
Packaging Tape & Reel (TR)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 20.5A (Ta), 27.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 84nC @ 10V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 3490pF @ 15V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 5.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
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