Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIA413DJ-T1-GE3

SIA413DJ-T1-GE3

SIA413DJ-T1-GE3

Part NumberSIA413DJ-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 12V 12A SC70-6

DatasheetSIA413DJ

Package / CasePowerPAK® SC-70-6

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 12V 12A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single

To learn about the specification of SIA413DJ-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIA413DJ-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIA413DJ-T1-GE3.
We are offering SIA413DJ-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIA413DJ-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIA413DJ
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	29mOhm @ 6.7A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	57nC @ 8V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	1800pF @ 10V
FET Feature	-
Power Dissipation (Max)	3.5W (Ta), 19W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SC-70-6 Single
Package / Case	PowerPAK® SC-70-6

SIA413DJ-T1-GE3 - Related Products

	FDG328P	ON Semiconductor, P-Channel 20V 1.5A (Ta) 750mW (Ta) Surface Mount SC-88 (SC-70-6), PowerTrench®	View
	FDZ193P	ON Semiconductor, P-Channel 20V 3A (Ta) 1.9W (Ta) Surface Mount 6-WLCSP (1.0x1.5), PowerTrench®	View
	SI1403BDL-T1-GE3	Vishay Siliconix, P-Channel 20V 1.5A (Ta) 625mW (Ta) Surface Mount SC-70-6, TrenchFET®	View
	RSF010P05TL	Rohm Semiconductor, P-Channel 45V 1A (Ta) 800mW (Ta) Surface Mount TUMT3,	View
	SI2319CDS-T1-GE3	Vishay Siliconix, P-Channel 40V 4.4A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	SQS481ENW-T1_GE3	Vishay Siliconix, P-Channel 150V 4.7A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8, Automotive, AEC-Q101, TrenchFET®	View
	FDD306P	ON Semiconductor, P-Channel 12V 6.7A (Ta) 52W (Ta) Surface Mount TO-252, PowerTrench®	View
	SI1031R-T1-GE3	Vishay Siliconix, P-Channel 20V 140mA (Ta) 250mW (Ta) Surface Mount SC-75A, TrenchFET®	View
	SI4465ADY-T1-GE3	Vishay Siliconix, P-Channel 8V 3W (Ta), 6.5W (Tc) Surface Mount 8-SO, TrenchFET®	View
	DMP21D6UFD-7	Diodes Incorporated, P-Channel 20V 600mA (Ta) 400mW Surface Mount X1-DFN1212-3,	View
	TT8U1TR	Rohm Semiconductor, P-Channel 20V 2.4A (Ta) 1.25W (Ta) Surface Mount 8-TSST,	View
	IRF9Z34STRLPBF	Vishay Siliconix, P-Channel 60V 18A (Tc) 3.7W (Ta), 88W (Tc) Surface Mount D2PAK,	View

SIA413DJ-T1-GE3 - Tags

SIA413DJ-T1-GE3 SIA413DJ-T1-GE3 PDF SIA413DJ-T1-GE3 datasheet SIA413DJ-T1-GE3 specification SIA413DJ-T1-GE3 image SIA413DJ-T1-GE3 India Renesas Electronics India SIA413DJ-T1-GE3 buy SIA413DJ-T1-GE3 SIA413DJ-T1-GE3 price SIA413DJ-T1-GE3 distributor SIA413DJ-T1-GE3 supplier SIA413DJ-T1-GE3 wholesales