Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI4431CDY
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	32mOhm @ 7A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1006pF @ 15V
FET Feature	-
Power Dissipation (Max)	4.2W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)

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SI9435BDY-T1-GE3	Vishay Siliconix, P-Channel 30V 4.1A (Ta) 1.3W (Ta) Surface Mount 8-SO, TrenchFET®	View
PMV65XPEAR	Nexperia USA Inc., P-Channel 20V 2.8A (Ta) 480mW (Ta), 6.25W (Tc) Surface Mount TO-236AB,	View
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SI4431CDY-T1-E3

Part NumberSI4431CDY-T1-E3