IXTP18P10T
IXTP18P10T
Part Number IXTP18P10T
Manufacturer IXYS
Description MOSFET P-CH 100V 18A TO-220
Package / Case TO-220-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 100V 18A (Tc) 83W (Tc) Through Hole TO-220AB
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IXTP18P10T - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IXT(Y,A,P)18P10T
Standard Package 50
Manufacturer IXYS
Series TrenchP™
Packaging Tube
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 120mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 2100pF @ 25V
FET Feature -
Power Dissipation (Max) 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
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