SI4122DY-T1-GE3
SI4122DY-T1-GE3
Part Number SI4122DY-T1-GE3 Description MOSFET N-CH 40V 27.2A 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 40V 27.2A (Tc) 3W (Ta), 6W (Tc) Surface Mount 8-SO
To learn about the specification of SI4122DY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4122DY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4122DY-T1-GE3.
We are offering SI4122DY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI4122DY-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI4122DY Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 27.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 4.5mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 4200pF @ 20V FET Feature - Power Dissipation (Max) 3W (Ta), 6W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width)
SI4122DY-T1-GE3 - Related ProductsMore >>
HUF75339P3 ON Semiconductor, N-Channel 55V 75A (Tc) 200W (Tc) Through Hole TO-220-3, UltraFET™
View
IRF135SA204 Infineon Technologies, N-Channel 135V 160A (Tc) 500W (Tc) Surface Mount D2PAK-7, HEXFET®, StrongIRFET™
View
IRFR3303TRPBF Infineon Technologies, N-Channel 30V 33A (Tc) 57W (Tc) Surface Mount D-Pak, HEXFET®
View
IPB015N04LGATMA1 Infineon Technologies, N-Channel 40V 120A (Tc) 250W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™
View
IPL60R360P6SATMA1 Infineon Technologies, N-Channel 600V 11.3A (Tc) 89.3W (Tc) Surface Mount 8-ThinPak (5x6), CoolMOS™ P6
View
IRFZ44ZSTRRPBF Infineon Technologies, N-Channel 55V 51A (Tc) 80W (Tc) Surface Mount D2PAK, HEXFET®
View
ZXMN6A07FTA Diodes Incorporated, N-Channel 60V 1.2A (Ta) 625mW (Ta) Surface Mount SOT-23-3,
View
CSD18510KCS Texas Instruments, N-Channel 40V 200A (Ta) 250W (Ta) Through Hole TO-220-3, NexFET™
View
RS1E280GNTB Rohm Semiconductor, N-Channel 30V 28A (Ta) 3W (Ta), 31W (Tc) Surface Mount 8-HSOP,
View
FDMC8854 ON Semiconductor, N-Channel 30V 15A (Tc) 2W (Ta), 41W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®
View
STP130N8F7 STMicroelectronics, N-Channel 80V 80A (Tc) 205W (Tc) Through Hole TO-220, STripFET™ F7
View
STN4NF20L STMicroelectronics, N-Channel 200V 1A (Tc) 3.3W (Tc) Surface Mount SOT-223, STripFET™ II
View
SI4122DY-T1-GE3 - Tags
English
