APT18M100B
APT18M100B
Part Number APT18M100B Description MOSFET N-CH 1000V 18A TO-247 Package / Case TO-247-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 1000V 18A (Tc) 625W (Tc) Through Hole TO-247 [B]
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APT18M100B - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet APT18M100(B,S) Standard Package 1 Manufacturer Microsemi Corporation Series - Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 700mOhm @ 9A, 10V Vgs(th) (Max) @ Id 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 4845pF @ 25V FET Feature - Power Dissipation (Max) 625W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247 [B] Package / Case TO-247-3
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