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2SJ652-1E

2SJ652-1E

Part Number2SJ652-1E

ManufacturerON Semiconductor

DescriptionMOSFET P-CH 60V 28A TO-220FP-3

Datasheet2SJ652

Package / CaseTO-220-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 60V 28A (Ta) 2W (Ta), 30W (Tc) Through Hole TO-220F-3SG

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2SJ652-1E - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	2SJ652
Standard Package	50
Manufacturer	ON Semiconductor
Series	-
Packaging	Tube
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	28A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	38mOhm @ 14A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	80nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4360pF @ 20V
FET Feature	-
Power Dissipation (Max)	2W (Ta), 30W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220F-3SG
Package / Case	TO-220-3 Full Pack

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