2SJ652-1E
2SJ652-1E
Part Number 2SJ652-1E Description MOSFET P-CH 60V 28A TO-220FP-3 Package / Case TO-220-3 Full PackUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 60V 28A (Ta) 2W (Ta), 30W (Tc) Through Hole TO-220F-3SG
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2SJ652-1E - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet 2SJ652 Standard Package 50 Manufacturer ON Semiconductor Series - Packaging Tube Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 28A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 38mOhm @ 14A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4360pF @ 20V FET Feature - Power Dissipation (Max) 2W (Ta), 30W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220F-3SG Package / Case TO-220-3 Full Pack
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