Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2323DDS-T1-GE3

SI2323DDS-T1-GE3

SI2323DDS-T1-GE3

Part NumberSI2323DDS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 5.3A SOT-23

DatasheetSI2323DDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 5.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23

To learn about the specification of SI2323DDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2323DDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2323DDS-T1-GE3.
We are offering SI2323DDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2323DDS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2323DDS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	39mOhm @ 4.1A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	36nC @ 8V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	1160pF @ 10V
FET Feature	-
Power Dissipation (Max)	960mW (Ta), 1.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2323DDS-T1-GE3 - Related Products

	BSH202,215	Nexperia USA Inc., P-Channel 30V 520mA (Ta) 417mW (Ta) Surface Mount TO-236AB,	View
	SQJ433EP-T1_GE3	Vishay Siliconix, P-Channel 30V 75A (Tc) 83W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®	View
	RTR020P02TL	Rohm Semiconductor, P-Channel 20V 2A (Ta) 1W (Ta) Surface Mount TSMT3,	View
	TP2104N3-G	Microchip Technology, P-Channel 40V 175mA (Tj) 740mW (Ta) Through Hole TO-92-3,	View
	SI7119DN-T1-E3	Vishay Siliconix, P-Channel 200V 3.8A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	SI3453DV-T1-GE3	Vishay Siliconix, P-Channel 30V 3.4A (Tc) 3W (Tc) Surface Mount 6-TSOP,	View
	NTTFS3A08PZTAG	ON Semiconductor, P-Channel 20V 9A (Ta) 840mW (Ta) Surface Mount 8-WDFN (3.3x3.3),	View
	IXTK90P20P	IXYS, P-Channel 200V 90A (Tc) 890W (Tc) Through Hole TO-264 (IXTK), PolarP™	View
	SUM110P08-11L-E3	Vishay Siliconix, P-Channel 80V 110A (Tc) 13.6W (Ta), 375W (Tc) Surface Mount TO-263 (D2Pak), TrenchFET®	View
	SSM6J512NU,LF	Toshiba Semiconductor and Storage, P-Channel 12V 10A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2), U-MOSVII	View
	STL30P3LLH6	STMicroelectronics, P-Channel 30V 30A (Tc) 75W (Tc) Surface Mount PowerFlat™ (5x6), DeepGATE™, STripFET™ VI	View
	NVTR0202PLT1G	ON Semiconductor, P-Channel 20V 400mA (Ta) 225mW (Ta) Surface Mount SOT-23,	View

SI2323DDS-T1-GE3 - Tags

SI2323DDS-T1-GE3 SI2323DDS-T1-GE3 PDF SI2323DDS-T1-GE3 datasheet SI2323DDS-T1-GE3 specification SI2323DDS-T1-GE3 image SI2323DDS-T1-GE3 India Renesas Electronics India SI2323DDS-T1-GE3 buy SI2323DDS-T1-GE3 SI2323DDS-T1-GE3 price SI2323DDS-T1-GE3 distributor SI2323DDS-T1-GE3 supplier SI2323DDS-T1-GE3 wholesales