SI4101DY-T1-GE3
SI4101DY-T1-GE3
Part Number SI4101DY-T1-GE3 Description MOSFET P-CH 30V 25.7A 8SOIC Package / Case 8-SOIC (0.154", 3.90mm Width)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 30V 25.7A (Tc) 6W (Tc) Surface Mount 8-SO
To learn about the specification of SI4101DY-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4101DY-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4101DY-T1-GE3.
We are offering SI4101DY-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI4101DY-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI4101DY-T1-GE3 Standard Package 2500 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 25.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6mOhm @ 15A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 203nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 8190pF @ 15V FET Feature - Power Dissipation (Max) 6W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width)
SI4101DY-T1-GE3 - Related ProductsMore >>
6HP04MH-TL-W ON Semiconductor, P-Channel 60V 370mA (Ta) 600mW (Ta) Surface Mount SC-70FL/MCPH3,
View
IXTP32P05T IXYS, P-Channel 50V 32A (Tc) 83W (Tc) Through Hole TO-220AB, TrenchP™
View
IRLMS6702TRPBF Infineon Technologies, P-Channel 20V 2.4A (Ta) 1.7W (Ta) Surface Mount Micro6™(TSOP-6), HEXFET®
View
NTB5605PT4G ON Semiconductor, P-Channel 60V 18.5A (Ta) 88W (Tc) Surface Mount D2PAK,
View
TSM480P06CH X0G Taiwan Semiconductor Corporation, P-Channel 60V 20A (Tc) 66W (Tc) Through Hole TO-251 (IPAK),
View
STL9P3LLH6 STMicroelectronics, P-Channel 30V 9A (Tc) 3W (Ta) Surface Mount PowerFlat™ (3.3x3.3), STripFET™ H6
View
SI2323DS-T1-E3 Vishay Siliconix, P-Channel 20V 3.7A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
RSD140P06TL Rohm Semiconductor, P-Channel 60V 14A (Ta) 20W (Tc) Surface Mount CPT3,
View
IXTQ44P15T IXYS, P-Channel 150V 44A (Tc) 298W (Tc) Through Hole TO-3P, TrenchP™
View
SI2301CDS-T1-E3 Vishay Siliconix, P-Channel 20V 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
SIA427ADJ-T1-GE3 Vishay Siliconix, P-Channel 8V 12A (Tc) 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single, TrenchFET®
View
IRFU9214PBF Vishay Siliconix, P-Channel 250V 2.7A (Tc) 50W (Tc) Through Hole TO-251AA,
View
SI4101DY-T1-GE3 - Tags
English
