PMXB65UPEZ
PMXB65UPEZ
Part Number PMXB65UPEZ Description MOSFET P-CH 12V 3.2A DFN1010D-3G Package / Case 3-XDFN Exposed PadUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 12V 3.2A (Ta) 317mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3
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PMXB65UPEZ - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet PMXB65UPE Standard Package 1 Manufacturer Nexperia USA Inc. Series - Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 3.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V Rds On (Max) @ Id, Vgs 72mOhm @ 3.2A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 634pF @ 6V FET Feature - Power Dissipation (Max) 317mW (Ta), 8.33W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DFN1010D-3 Package / Case 3-XDFN Exposed Pad
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