Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI8823EDB-T2-E1

SI8823EDB-T2-E1

SI8823EDB-T2-E1

Part NumberSI8823EDB-T2-E1

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 2.7A 4-MICROFOOT

DatasheetSI8823EDB

Package / Case4-XFBGA

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 2.7A (Tc) 900mW (Tc) Surface Mount 4-MICRO FOOT® (0.8x0.8)

To learn about the specification of SI8823EDB-T2-E1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI8823EDB-T2-E1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI8823EDB-T2-E1.
We are offering SI8823EDB-T2-E1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI8823EDB-T2-E1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI8823EDB
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET® Gen III
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Rds On (Max) @ Id, Vgs	95mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	580pF @ 10V
FET Feature	-
Power Dissipation (Max)	900mW (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-MICRO FOOT® (0.8x0.8)
Package / Case	4-XFBGA

SI8823EDB-T2-E1 - Related Products

	SI8457DB-T1-E1	Vishay Siliconix, P-Channel 12V 1.1W (Ta), 2.7W (Tc) Surface Mount 4-MICRO FOOT® (1.6x1.6), TrenchFET®	View
	FDMS6681Z	ON Semiconductor, P-Channel 30V 21.1A (Ta), 49A (Tc) 2.5W (Ta), 73W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	PMCM6501VPEZ	Nexperia USA Inc., P-Channel 12V 6.2A (Ta) 556mW (Ta), 12.5W (Tc) Surface Mount 6-WLCSP (1.48x.98),	View
	SI6415DQ-T1-GE3	Vishay Siliconix, P-Channel 30V 1.5W (Ta) Surface Mount 8-TSSOP, TrenchFET®	View
	SSM3J328R,LF	Toshiba Semiconductor and Storage, P-Channel 20V 6A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVI	View
	FDC608PZ	ON Semiconductor, P-Channel 20V 5.8A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6, PowerTrench®	View
	TPH1R712MD,L1Q	Toshiba Semiconductor and Storage, P-Channel 20V 60A (Tc) 78W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVI	View
	SSM3J353F,LF	Toshiba Semiconductor and Storage, P-Channel 30V 2A (Ta) 600mW (Ta) Surface Mount S-Mini, U-MOSVI	View
	ATP108-TL-H	ON Semiconductor, P-Channel 40V 70A (Ta) 60W (Tc) Surface Mount ATPAK,	View
	IPD50P03P4L11ATMA1	Infineon Technologies, P-Channel 30V 50A (Tc) 58W (Tc) Surface Mount PG-TO252-3, OptiMOS™	View
	ZXM61P03FTA	Diodes Incorporated, P-Channel 30V 1.1A (Ta) 625mW (Ta) Surface Mount SOT-23-3,	View
	ZXMP6A17GQTA	Diodes Incorporated, P-Channel 60V 3A (Ta) 2W (Ta) Surface Mount SOT-223,	View

SI8823EDB-T2-E1 - Tags

SI8823EDB-T2-E1 SI8823EDB-T2-E1 PDF SI8823EDB-T2-E1 datasheet SI8823EDB-T2-E1 specification SI8823EDB-T2-E1 image SI8823EDB-T2-E1 India Renesas Electronics India SI8823EDB-T2-E1 buy SI8823EDB-T2-E1 SI8823EDB-T2-E1 price SI8823EDB-T2-E1 distributor SI8823EDB-T2-E1 supplier SI8823EDB-T2-E1 wholesales