Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2365EDS-T1-GE3

SI2365EDS-T1-GE3

SI2365EDS-T1-GE3

Part NumberSI2365EDS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V 5.9A TO-236

DatasheetSI2365EDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 5.9A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount TO-236

To learn about the specification of SI2365EDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2365EDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2365EDS-T1-GE3.
We are offering SI2365EDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2365EDS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2365EDS
Standard Package	1
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	5.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	32mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	36nC @ 8V
Vgs (Max)	±8V
FET Feature	-
Power Dissipation (Max)	1W (Ta), 1.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-236
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2365EDS-T1-GE3 - Related Products

	PMZ1200UPEYL	Nexperia USA Inc., P-Channel 30V 410mA (Ta) 310mW (Ta), 1.67W (Tc) Surface Mount DFN1006-3,	View
	SI2307BDS-T1-GE3	Vishay Siliconix, P-Channel 30V 2.5A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	DMP32D4S-13	Diodes Incorporated, P-Channel 30V 300mA (Ta) 370mW (Ta) Surface Mount SOT-23,	View
	SUD50P06-15L-E3	Vishay Siliconix, P-Channel 60V 50A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252, (D-Pak), TrenchFET®	View
	NVD2955T4G	ON Semiconductor, P-Channel 60V 12A (Ta) 55W (Ta) Surface Mount DPAK, Automotive, AEC-Q101	View
	RSJ250P10FRATL	Rohm Semiconductor, P-Channel 100V 25A (Ta) 50W (Ta) Surface Mount LPTS, Automotive, AEC-Q101	View
	SI7629DN-T1-GE3	Vishay Siliconix, P-Channel 20V 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	SI2319DS-T1-E3	Vishay Siliconix, P-Channel 40V 2.3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	SQA405EJ-T1_GE3	Vishay Siliconix, P-Channel 40V 10A (Tc) 13.6W (Tc) Surface Mount PowerPAK® SC-70-6 Single, Automotive, AEC-Q101, TrenchFET®	View
	DMP3028LFDE-7	Diodes Incorporated, P-Channel 30V 6.8A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type E),	View
	FDV302P	ON Semiconductor, P-Channel 25V 120mA (Ta) 350mW (Ta) Surface Mount SOT-23,	View
	FDV304P	ON Semiconductor, P-Channel 25V 460mA (Ta) 350mW (Ta) Surface Mount SOT-23,	View

SI2365EDS-T1-GE3 - Tags

SI2365EDS-T1-GE3 SI2365EDS-T1-GE3 PDF SI2365EDS-T1-GE3 datasheet SI2365EDS-T1-GE3 specification SI2365EDS-T1-GE3 image SI2365EDS-T1-GE3 India Renesas Electronics India SI2365EDS-T1-GE3 buy SI2365EDS-T1-GE3 SI2365EDS-T1-GE3 price SI2365EDS-T1-GE3 distributor SI2365EDS-T1-GE3 supplier SI2365EDS-T1-GE3 wholesales