SI2365EDS-T1-GE3
SI2365EDS-T1-GE3
Part Number SI2365EDS-T1-GE3 Description MOSFET P-CH 20V 5.9A TO-236 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 5.9A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount TO-236
To learn about the specification of SI2365EDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2365EDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2365EDS-T1-GE3.
We are offering SI2365EDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI2365EDS-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI2365EDS Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 5.9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 32mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 36nC @ 8V Vgs (Max) ±8V FET Feature - Power Dissipation (Max) 1W (Ta), 1.7W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236 Package / Case TO-236-3, SC-59, SOT-23-3
SI2365EDS-T1-GE3 - Related ProductsMore >>
DMP4065S-7 Diodes Incorporated, P-Channel 40V 2.4A (Ta) 720mW (Ta) Surface Mount SOT-23,
View
DMP2040UFDF-7 Diodes Incorporated, P-Channel 20V 13A (Tc) 1.8W (Ta) Surface Mount U-DFN2020-6 (Type F),
View
STD52P3LLH6 STMicroelectronics, P-Channel 30V 52A (Tc) 70W (Tc) Surface Mount DPAK, STripFET™ H6
View
SPD04P10PLGBTMA1 Infineon Technologies, P-Channel 100V 4.2A (Tc) 38W (Tc) Surface Mount PG-TO252-3, SIPMOS®
View
FDFS2P106A ON Semiconductor, P-Channel 60V 3A (Ta) 900mW (Ta) Surface Mount 8-SOIC, PowerTrench®
View
SI1401EDH-T1-GE3 Vishay Siliconix, P-Channel 12V 4A (Tc) 1.6W (Ta), 2.8W (Tc) Surface Mount SC-70-6 (SOT-363), TrenchFET®
View
RQ1A070ZPTR Rohm Semiconductor, P-Channel 12V 7A (Ta) 700mW (Ta) Surface Mount TSMT8,
View
RW1E025RPT2CR Rohm Semiconductor, P-Channel 30V 2.5A (Ta) 700mW (Ta) Surface Mount 6-WEMT,
View
XP162A12A6PR-G Torex Semiconductor Ltd, P-Channel 20V 2.5A (Ta) 2W (Ta) Surface Mount SOT-89,
View
IRF9Z34STRRPBF Vishay Siliconix, P-Channel 60V 18A (Tc) 3.7W (Ta), 88W (Tc) Surface Mount D2PAK,
View
SI2343CDS-T1-GE3 Vishay Siliconix, P-Channel 30V 5.9A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
IRF6216TRPBF Infineon Technologies, P-Channel 150V 2.2A (Ta) 2.5W (Ta) Surface Mount 8-SO, HEXFET®
View
SI2365EDS-T1-GE3 - Tags
English
