SI2365EDS-T1-GE3
SI2365EDS-T1-GE3
Part Number SI2365EDS-T1-GE3 Description MOSFET P-CH 20V 5.9A TO-236 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 5.9A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount TO-236
To learn about the specification of SI2365EDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2365EDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2365EDS-T1-GE3.
We are offering SI2365EDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI2365EDS-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI2365EDS Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 5.9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 32mOhm @ 4A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 36nC @ 8V Vgs (Max) ±8V FET Feature - Power Dissipation (Max) 1W (Ta), 1.7W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-236 Package / Case TO-236-3, SC-59, SOT-23-3
SI2365EDS-T1-GE3 - Related ProductsMore >>
DMP2240UW-7 Diodes Incorporated, P-Channel 20V 1.5A (Ta) 250mW (Ta) Surface Mount SOT-323,
View
DMP32D9UFZ-7B Diodes Incorporated, P-Channel 30V 200mA (Ta) 390mW (Ta) Surface Mount X2-DFN0606-3,
View
DMP3030SN-7 Diodes Incorporated, P-Channel 30V 700mA (Ta) 500mW (Ta) Surface Mount SC-59-3,
View
FQD2P40TM ON Semiconductor, P-Channel 400V 1.56A (Tc) 2.5W (Ta), 38W (Tc) Surface Mount D-Pak, QFET®
View
IRFR9024NTRLPBF Infineon Technologies, P-Channel 55V 11A (Tc) 38W (Tc) Surface Mount D-Pak, HEXFET®
View
DMP4025LSS-13 Diodes Incorporated, P-Channel 40V 6A (Ta) 1.52W (Ta) Surface Mount 8-SO,
View
DMG7401SFGQ-7 Diodes Incorporated, P-Channel 30V 9.8A (Ta) 940mW (Ta) Surface Mount PowerDI3333-8,
View
TSM2303CX RFG Taiwan Semiconductor Corporation, P-Channel 30V 1.3A (Ta) 700mW (Ta) Surface Mount SOT-23,
View
FQT3P20TF ON Semiconductor, P-Channel 200V 670mA (Tc) 2.5W (Tc) Surface Mount SOT-223-4, QFET®
View
RD3H160SPTL1 Rohm Semiconductor, P-Channel 45V 16A (Ta) 20W (Tc) Surface Mount TO-252,
View
SI4459ADY-T1-GE3 Vishay Siliconix, P-Channel 30V 29A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SO, TrenchFET®
View
SI2301BDS-T1-GE3 Vishay Siliconix, P-Channel 20V 2.2A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
SI2365EDS-T1-GE3 - Tags
English
