SI2377EDS-T1-GE3
SI2377EDS-T1-GE3
Part Number SI2377EDS-T1-GE3 Description MOSFET P-CH 20V 4.4A SOT-23 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 4.4A (Tc) 1.25W (Ta), 1.8W (Tc) Surface Mount SOT-23-3 (TO-236)
To learn about the specification of SI2377EDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2377EDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2377EDS-T1-GE3.
We are offering SI2377EDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI2377EDS-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI2377EDS Standard Package 3000 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Tape & Reel (TR) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 61mOhm @ 3.2A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 21nC @ 8V Vgs (Max) ±8V FET Feature - Power Dissipation (Max) 1.25W (Ta), 1.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3
SI2377EDS-T1-GE3 - Related ProductsMore >>
IRFI9540GPBF Vishay Siliconix, P-Channel 100V 11A (Tc) 48W (Tc) Through Hole TO-220-3,
View
IRFU5305PBF Infineon Technologies, P-Channel 55V 31A (Tc) 110W (Tc) Through Hole IPAK (TO-251), HEXFET®
View
MCH6341-TL-W ON Semiconductor, P-Channel 30V 5A (Ta) Surface Mount 6-MCPH,
View
SI4483ADY-T1-GE3 Vishay Siliconix, P-Channel 30V 19.2A (Tc) 2.9W (Ta), 5.9W (Tc) Surface Mount 8-SO, TrenchFET®
View
SI4455DY-T1-GE3 Vishay Siliconix, P-Channel 150V 2A (Ta) 5.9W (Tc) Surface Mount 8-SO, TrenchFET®
View
FQP9P25 ON Semiconductor, P-Channel 250V 9.4A (Tc) 120W (Tc) Through Hole TO-220-3, QFET®
View
IRF9520SPBF Vishay Siliconix, P-Channel 100V 6.8A (Tc) 3.7W (Ta), 60W (Tc) Surface Mount D2PAK,
View
RD3H080SPTL1 Rohm Semiconductor, P-Channel 45V 8A (Ta) 15W (Tc) Surface Mount TO-252,
View
CSD25404Q3 Texas Instruments, P-Channel 20V 104A (Tc) 2.8W (Ta), 96W (Tc) Surface Mount 8-VSON (3.3x3.3), NexFET™
View
SPD18P06PGBTMA1 Infineon Technologies, P-Channel 60V 18.6A (Tc) 80W (Tc) Surface Mount PG-TO252-3, SIPMOS®
View
NDS0605 ON Semiconductor, P-Channel 60V 180mA (Ta) 360mW (Ta) Surface Mount SOT-23,
View
CSD25480F3T Texas Instruments, P-Channel 20V 1.7A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™
View
SI2377EDS-T1-GE3 - Tags
English
