SI4463BDY-T1-GE3
SI4463BDY-T1-GE3
Part Number SI4463BDY-T1-GE3
Description MOSFET P-CH 20V 9.8A 8SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
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Lead Time To be Confirmed
Detailed Description P-Channel 20V 9.8A (Ta) 1.5W (Ta) Surface Mount 8-SO
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SI4463BDY-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI4463BDY
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 9.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 13.7A, 10V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 56nC @ 4.5V
Vgs (Max) ±12V
FET Feature -
Power Dissipation (Max) 1.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
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