Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2337DS-T1-GE3

SI2337DS-T1-GE3

SI2337DS-T1-GE3

Part NumberSI2337DS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 80V 2.2A SOT23-3

DatasheetSI2337DS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 80V 2.2A (Tc) 760mW (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2337DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2337DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2337DS-T1-GE3.
We are offering SI2337DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2337DS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2337DS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	270mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	500pF @ 40V
FET Feature	-
Power Dissipation (Max)	760mW (Ta), 2.5W (Tc)
Operating Temperature	-50°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2337DS-T1-GE3 - Related Products

	MCM1216-TP	Micro Commercial Co, P-Channel 12V 16A (Ta) 2.5W (Ta), 18W (Tc) Surface Mount DFN2020-6J,	View
	IRF9540NPBF	Infineon Technologies, P-Channel 100V 23A (Tc) 140W (Tc) Through Hole TO-220AB, HEXFET®	View
	FQD5P20TM	ON Semiconductor, P-Channel 200V 3.7A (Tc) 2.5W (Ta), 45W (Tc) Surface Mount D-Pak, QFET®	View
	MTM761110LBF	Panasonic Electronic Components, P-Channel 12V 4A (Ta) 700mW (Ta) Surface Mount WSMini6-F1-B,	View
	TPC6111(TE85L,F,M)	Toshiba Semiconductor and Storage, P-Channel 20V 5.5A (Ta) 700mW (Ta) Surface Mount VS-6 (2.9x2.8), U-MOSV	View
	IRF9Z34STRLPBF	Vishay Siliconix, P-Channel 60V 18A (Tc) 3.7W (Ta), 88W (Tc) Surface Mount D2PAK,	View
	DMP6050SFG-13	Diodes Incorporated, P-Channel 60V 4.8A (Ta) 1.1W (Ta) Surface Mount PowerDI3333-8,	View
	SI2371EDS-T1-GE3	Vishay Siliconix, P-Channel 30V 4.8A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23, TrenchFET®	View
	SQS401ENW-T1_GE3	Vishay Siliconix, P-Channel 40V 16A (Tc) 62.5W (Tc) Surface Mount PowerPAK® 1212-8, Automotive, AEC-Q101, TrenchFET®	View
	PMZ350UPEYL	Nexperia USA Inc., P-Channel 20V 1A (Ta) 360mW (Ta), 3.125W (Tc) Surface Mount DFN1006-3,	View
	DMP4015SPS-13	Diodes Incorporated, P-Channel 40V 8.5A (Ta) 1.3W (Ta) Surface Mount PowerDI5060-8,	View
	NVGS5120PT1G	ON Semiconductor, P-Channel 60V 1.8A (Ta) 600mW (Ta) Surface Mount 6-TSOP,	View

SI2337DS-T1-GE3 - Tags

SI2337DS-T1-GE3 SI2337DS-T1-GE3 PDF SI2337DS-T1-GE3 datasheet SI2337DS-T1-GE3 specification SI2337DS-T1-GE3 image SI2337DS-T1-GE3 India Renesas Electronics India SI2337DS-T1-GE3 buy SI2337DS-T1-GE3 SI2337DS-T1-GE3 price SI2337DS-T1-GE3 distributor SI2337DS-T1-GE3 supplier SI2337DS-T1-GE3 wholesales