IXTR170P10P
IXTR170P10P
Part Number IXTR170P10P Manufacturer IXYS Description MOSFET P-CH 100V 108A ISOPLUS247 Package / Case ISOPLUS247™Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 100V 108A (Tc) 312W (Tc) Through Hole ISOPLUS247™
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IXTR170P10P - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IXTR170P10P Standard Package 30 Manufacturer IXYS Series PolarP™ Packaging Tube Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 108A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 13mOhm @ 85A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 12600pF @ 25V FET Feature - Power Dissipation (Max) 312W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS247™ Package / Case ISOPLUS247™
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