Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SISH407DN-T1-GE3

SISH407DN-T1-GE3

SISH407DN-T1-GE3

Part NumberSISH407DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 20V POWERPAK 1212

DatasheetSISH407DN Datasheet

Package / CasePowerPAK® 1212-8SH

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 20V 15.4A (Ta), 25A (Tc) 3.6W (Ta), 33W (Tc) Surface Mount PowerPAK® 1212-8SH

To learn about the specification of SISH407DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SISH407DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SISH407DN-T1-GE3.
We are offering SISH407DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SISH407DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SISH407DN Datasheet
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	15.4A (Ta), 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	9.5mOhm @ 15.3A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	93.8nC @ 8V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	2760pF @ 10V
FET Feature	-
Power Dissipation (Max)	3.6W (Ta), 33W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8SH
Package / Case	PowerPAK® 1212-8SH

SISH407DN-T1-GE3 - Related Products

	SI7489DP-T1-GE3	Vishay Siliconix, P-Channel 100V 28A (Tc) 5.2W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	PMZB320UPEYL	Nexperia USA Inc., P-Channel 30V 1A (Ta) 350mW (Ta), 6.25W (Tc) Surface Mount DFN1006B-3,	View
	RQ6P015SPTR	Rohm Semiconductor, P-Channel 100V 1.5A (Ta) 600mW (Ta) Surface Mount TSMT6 (SC-95),	View
	RQ6E050ATTCR	Rohm Semiconductor, P-Channel 30V 5A (Ta) 1.25W (Ta) Surface Mount TSMT6 (SC-95),	View
	CEDM8004VL TR	Central Semiconductor Corp, P-Channel 30V 450mA (Ta) 100mW (Ta) Surface Mount SOT-883VL,	View
	SI8409DB-T1-E1	Vishay Siliconix, P-Channel 30V 4.6A (Ta) 1.47W (Ta) Surface Mount 4-Microfoot, TrenchFET®	View
	SI2101-TP	Micro Commercial Co, P-Channel 20V 1.4A 290mW Surface Mount SOT-323,	View
	ZXMP10A13FQTA	Diodes Incorporated, P-Channel 100V 600mA (Ta) 625mW (Ta) Surface Mount SOT-23,	View
	SI2325DS-T1-E3	Vishay Siliconix, P-Channel 150V 530mA (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	SI8489EDB-T2-E1	Vishay Siliconix, P-Channel 20V 780mW (Ta), 1.8W (Tc) Surface Mount 4-Microfoot, TrenchFET®	View
	SI7121DN-T1-GE3	Vishay Siliconix, P-Channel 30V 16A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	CSD23203W	Texas Instruments, P-Channel 8V 3A (Ta) 750mW (Ta) Surface Mount 6-DSBGA, NexFET™	View

SISH407DN-T1-GE3 - Tags

SISH407DN-T1-GE3 SISH407DN-T1-GE3 PDF SISH407DN-T1-GE3 datasheet SISH407DN-T1-GE3 specification SISH407DN-T1-GE3 image SISH407DN-T1-GE3 India Renesas Electronics India SISH407DN-T1-GE3 buy SISH407DN-T1-GE3 SISH407DN-T1-GE3 price SISH407DN-T1-GE3 distributor SISH407DN-T1-GE3 supplier SISH407DN-T1-GE3 wholesales