Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2325DS-T1-GE3

SI2325DS-T1-GE3

SI2325DS-T1-GE3

Part NumberSI2325DS-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET P-CH 150V 0.53A SOT-23

DatasheetSI2325DS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionP-Channel 150V 530mA (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2325DS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2325DS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2325DS-T1-GE3.
We are offering SI2325DS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2325DS-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2325DS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25°C	530mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	510pF @ 25V
FET Feature	-
Power Dissipation (Max)	750mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2325DS-T1-GE3 - Related Products

	CSD25483F4	Texas Instruments, P-Channel 20V 1.6A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, NexFET™	View
	IXTH16P60P	IXYS, P-Channel 600V 16A (Tc) 460W (Tc) Through Hole TO-247 (IXTH), PolarP™	View
	SI7317DN-T1-GE3	Vishay Siliconix, P-Channel 150V 2.8A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®	View
	IRFR9024PBF	Vishay Siliconix, P-Channel 60V 8.8A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount D-Pak,	View
	BUK6Y57-60PX	Nexperia USA Inc., P-Channel 60V 23A (Ta) 66W (Ta) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™	View
	IRFR6215TRPBF	Infineon Technologies, P-Channel 150V 13A (Tc) 110W (Tc) Surface Mount D-Pak, HEXFET®	View
	MCH6341-TL-W	ON Semiconductor, P-Channel 30V 5A (Ta) Surface Mount 6-MCPH,	View
	FDMA905P	ON Semiconductor, P-Channel 12V 10A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2), PowerTrench®	View
	DMP2006UFG-7	Diodes Incorporated, P-Channel 20V 17.5A (Ta), 40A (Tc) 2.3W (Ta) Surface Mount PowerDI3333-8,	View
	SI9407BDY-T1-GE3	Vishay Siliconix, P-Channel 60V 4.7A (Tc) 2.4W (Ta), 5W (Tc) Surface Mount 8-SO, TrenchFET®	View
	SI2333CDS-T1-GE3	Vishay Siliconix, P-Channel 12V 7.1A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	IPD90P04P405ATMA1	Infineon Technologies, P-Channel 40V 90A (Tc) 125W (Tc) Surface Mount PG-TO252-3-313, OptiMOS™	View

SI2325DS-T1-GE3 - Tags

SI2325DS-T1-GE3 SI2325DS-T1-GE3 PDF SI2325DS-T1-GE3 datasheet SI2325DS-T1-GE3 specification SI2325DS-T1-GE3 image SI2325DS-T1-GE3 India Renesas Electronics India SI2325DS-T1-GE3 buy SI2325DS-T1-GE3 SI2325DS-T1-GE3 price SI2325DS-T1-GE3 distributor SI2325DS-T1-GE3 supplier SI2325DS-T1-GE3 wholesales