SI8481DB-T1-E1
SI8481DB-T1-E1
Part Number SI8481DB-T1-E1 Description MOSFET P-CH 20V 9.7A 4-MICROFOOT Package / Case 4-UFBGAUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 20V 9.7A (Tc) 2.8W (Tc) Surface Mount 4-MICRO FOOT® (1.6x1.6)
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SI8481DB-T1-E1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI8481DB Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Gen III Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 9.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 21mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 47nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 2500pF @ 10V FET Feature - Power Dissipation (Max) 2.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 4-MICRO FOOT® (1.6x1.6) Package / Case 4-UFBGA
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