Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SI2308BDS-T1-E3

SI2308BDS-T1-E3

SI2308BDS-T1-E3

Part NumberSI2308BDS-T1-E3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 60V 2.3A SOT23-3

DatasheetSI2308BDS

Package / CaseTO-236-3, SC-59, SOT-23-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 60V 2.3A (Tc) 1.09W (Ta), 1.66W (Tc) Surface Mount SOT-23-3 (TO-236)

To learn about the specification of SI2308BDS-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2308BDS-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2308BDS-T1-E3.
We are offering SI2308BDS-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SI2308BDS-T1-E3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SI2308BDS
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	2.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	156mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6.8nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	190pF @ 30V
FET Feature	-
Power Dissipation (Max)	1.09W (Ta), 1.66W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-3 (TO-236)
Package / Case	TO-236-3, SC-59, SOT-23-3

SI2308BDS-T1-E3 - Related Products

	FDMS7672	ON Semiconductor, N-Channel 30V 19A (Ta), 28A (Tc) 2.5W (Ta), 48W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View
	SI2306BDS-T1-E3	Vishay Siliconix, N-Channel 30V 3.16A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®	View
	TN2106K1-G	Microchip Technology, N-Channel 60V 280mA (Tj) 360mW (Tc) Surface Mount TO-236AB (SOT23),	View
	STB60NF06T4	STMicroelectronics, N-Channel 60V 60A (Tc) 110W (Tc) Surface Mount D2PAK, STripFET™ II	View
	APT47N60BC3G	Microsemi Corporation, N-Channel 600V 47A (Tc) 417W (Tc) Through Hole TO-247 [B],	View
	FQT7N10TF	ON Semiconductor, N-Channel 100V 1.7A (Tc) 2W (Tc) Surface Mount SOT-223-4, QFET®	View
	PMPB23XNEZ	Nexperia USA Inc., N-Channel 20V 7A (Ta) 1.7W (Ta) Surface Mount 6-DFN2020MD (2x2),	View
	IXFK90N20	IXYS, N-Channel 200V 90A (Tc) 500W (Tc) Through Hole TO-264AA (IXFK), HiPerFET™	View
	BUK7M10-40EX	Nexperia USA Inc., N-Channel 40V 56A (Tc) 62W (Tc) Surface Mount LFPAK33, Automotive, AEC-Q101	View
	SIS888DN-T1-GE3	Vishay Siliconix, N-Channel 150V 20.2A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3), ThunderFET®	View
	PHB32N06LT,118	Nexperia USA Inc., N-Channel 60V 34A (Tc) 97W (Tc) Surface Mount D2PAK, TrenchMOS™	View
	IRF7580MTRPBF	Infineon Technologies, N-Channel 60V 114A (Tc) 115W (Tc) Surface Mount DirectFET™ Isometric ME, StrongIRFET™	View

SI2308BDS-T1-E3 - Tags

SI2308BDS-T1-E3 SI2308BDS-T1-E3 PDF SI2308BDS-T1-E3 datasheet SI2308BDS-T1-E3 specification SI2308BDS-T1-E3 image SI2308BDS-T1-E3 India Renesas Electronics India SI2308BDS-T1-E3 buy SI2308BDS-T1-E3 SI2308BDS-T1-E3 price SI2308BDS-T1-E3 distributor SI2308BDS-T1-E3 supplier SI2308BDS-T1-E3 wholesales