IRF6662TRPBF
IRF6662TRPBF
Part Number IRF6662TRPBF Description MOSFET N-CH 100V 8.3A DIRECTFET Package / Case DirectFET™ Isometric MZUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 8.3A (Ta), 47A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MZ
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IRF6662TRPBF - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRF6662(TR)PbF Standard Package 1 Manufacturer Infineon Technologies Series HEXFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 8.3A (Ta), 47A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 22mOhm @ 8.2A, 10V Vgs(th) (Max) @ Id 4.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1360pF @ 25V FET Feature - Power Dissipation (Max) 2.8W (Ta), 89W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DIRECTFET™ MZ Package / Case DirectFET™ Isometric MZ
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