SI2305CDS-T1-GE3
SI2305CDS-T1-GE3
Part Number SI2305CDS-T1-GE3 Description MOSFET P-CH 8V 5.8A SOT23-3 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description P-Channel 8V 5.8A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
To learn about the specification of SI2305CDS-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI2305CDS-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI2305CDS-T1-GE3.
We are offering SI2305CDS-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI2305CDS-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI2305CDS Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C 5.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 35mOhm @ 4.4A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 30nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 960pF @ 4V FET Feature - Power Dissipation (Max) 960mW (Ta), 1.7W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3
SI2305CDS-T1-GE3 - Related ProductsMore >>
SI2319DS-T1-E3 Vishay Siliconix, P-Channel 40V 2.3A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
SI2343CDS-T1-GE3 Vishay Siliconix, P-Channel 30V 5.9A (Tc) 1.25W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
CSD25481F4T Texas Instruments, P-Channel 20V 2.5A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR, FemtoFET™
View
DMPH6050SK3Q-13 Diodes Incorporated, P-Channel 60V 7.2A (Ta), 23.6A (Tc) 1.9W (Ta) Surface Mount TO-252,
View
MMSF3P02HDR2G ON Semiconductor, P-Channel 20V 5.6A (Ta) 2.5W (Ta) Surface Mount 8-SOIC,
View
BSS215PH6327XTSA1 Infineon Technologies, P-Channel 20V 1.5A (Ta) 500mW (Ta) Surface Mount SOT-23-3, OptiMOS™
View
RTL030P02TR Rohm Semiconductor, P-Channel 20V 3A (Ta) 1W (Ta) Surface Mount TUMT6,
View
FQPF9P25 ON Semiconductor, P-Channel 250V 6A (Tc) 50W (Tc) Through Hole TO-220F, QFET®
View
IXTA10P50P IXYS, P-Channel 500V 10A (Tc) 300W (Tc) Surface Mount TO-263 (IXTA), PolarP™
View
ZXMP6A17GQTA Diodes Incorporated, P-Channel 60V 3A (Ta) 2W (Ta) Surface Mount SOT-223,
View
SI2301CDS-T1-GE3 Vishay Siliconix, P-Channel 20V 3.1A (Tc) 860mW (Ta), 1.6W (Tc) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
SIB457EDK-T1-GE3 Vishay Siliconix, P-Channel 20V 9A (Tc) 2.4W (Ta), 13W (Tc) Surface Mount, TrenchFET®
View
SI2305CDS-T1-GE3 - Tags
English
